1. Ktisis Cyprus University of Technology
  2. Cyprus University of Technology (Research Output)
  3. Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation
Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/33368
DC FieldValueLanguage
dc.contributor.authorVemulapati, Umamaheswara-
dc.contributor.authorStiasny, Thomas-
dc.contributor.authorWikstrom, Tobias-
dc.contributor.authorLophitis, Neophytos-
dc.contributor.authorUdrea, Florin-
dc.date.accessioned2024-12-20T07:39:46Z-
dc.date.available2024-12-20T07:39:46Z-
dc.date.issued2020-09-01-
dc.identifier.citationProceedings of the International Symposium on Power Semiconductor Devices and ICs, 2020, Volume 2020-September, Pages 490 - 493en_US
dc.identifier.isbn[9781728148366]-
dc.identifier.issn10636854-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/33368-
dc.description.abstractThe planar Integrated Gate Commutated Thyristor (IGCT) concept is proposed to simplify the fabrication process of the device and improve the ruggedness as well as electrothermal performance of the device. The planar IGCT concept has been verified experimentally with 4.5kV devices fabricated on 4-inch Si wafers. Afterwards, the electrical characteristics of the planar IGCT were compared with that of the conventional (with trench or mesa gate) IGCT. Both the planar and the conventional IGCTs are fabricated with corrugated p-base referred to as High Power Technology (HPT) design. In addition, mixed-mode TCAD device simulations have been performed to verify the turn-off failure mechanism and to analyze the electro-thermal performance of the planar IGCT in reference to that of the conventional IGCT.en_US
dc.language.isoenen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectdiscrete power semiconductoren_US
dc.subjecthigh power semiconductor switchen_US
dc.subjectIGCTen_US
dc.subjectplanar-gateen_US
dc.subjectThyristoren_US
dc.subjecttrench-gateen_US
dc.titleIntegrated Gate Commutated Thyristor: From Trench to Planaren_US
dc.typeConference Papersen_US
dc.collaborationAbb Power Gridsen_US
dc.collaborationUniversity of Nottinghamen_US
dc.collaborationUniversity of Cambridgeen_US
dc.journalsOpen Accessen_US
dc.countrySwitzerlanden_US
dc.countryUnited Kingdomen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.relation.conferenceInternational Symposium on Power Semiconductor Devices and ICsen_US
dc.identifier.doi10.1109/ISPSD46842.2020.9170102en_US
dc.identifier.scopus2-s2.0-85090554858-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/85090554858-
dc.relation.volume2020-Septemberen_US
cut.common.academicyearemptyen_US
dc.identifier.spage490en_US
dc.identifier.epage493en_US
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_c94f-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.openairetypeconferenceObject-
crisitem.author.deptDepartment of Electrical Engineering, Computer Engineering and Informatics-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0901-0876-
crisitem.author.parentorgFaculty of Engineering and Technology-
Appears in Collections:Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation
Files in This Item:
File Description SizeFormat
Integrated_Gate_Commutated_Thyristor_From_Trench_to_Planar.pdf1.21 MBAdobe PDFView/Open
CORE Recommender
Show simple item record

Page view(s)

5
checked on Dec 23, 2024

Google ScholarTM

Check

Altmetric


This item is licensed under a Creative Commons License Creative Commons