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https://hdl.handle.net/20.500.14279/33226| Title: | The Stripe Fortified GCT: A new GCT design for maximizing the controllable current | Authors: | Lophitis, Neophytos Antoniou, M. Udrea, F. Nistor, I. Arnold, M. Wikstrom, T. Vobecky, J. Rahimo, M. |
Major Field of Science: | Engineering and Technology | Keywords: | Computer simulation;Current flows;New devices;Novel structures;Turn offs;Two dimensional model | Issue Date: | 2014 | Source: | Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014, pp. 123 - 126 | Start page: | 123 | End page: | 126 | Conference: | 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) | Abstract: | In this paper we introduce a new GCT design, namely the Stripe Fortified GCT, for the purpose of maximizing the controllable current by optimizing the current flow path in the device during turn-off. The main design of the new device along with variants are introduced. The MCC performance of this novel structure is assessed with a developed two dimensional model for full wafer simulations. Our results show that this new design is a very good candidate for increasing the MCC to values more than 5000A. © 2014 IEEE. | URI: | https://hdl.handle.net/20.500.14279/33226 | ISBN: | 9781479929177 | DOI: | 10.1109/ISPSD.2014.6855991 | Rights: | Attribution-NonCommercial-NoDerivatives 4.0 International | Type: | Conference Papers | Affiliation : | University of Cambridge ABB Switzerland Ltd., Corporate Reasearch, CH-5405 Baden-Dattwil, Switzerland ABB Switzerland Ltd., Semiconductors, Ch-5600 Lenzburg, Switzerland |
Publication Type: | Peer Reviewed |
| Appears in Collections: | Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation |
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