1. Ktisis Cyprus University of Technology
  2. Cyprus University of Technology (Research Output)
  3. Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation
Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/33226
DC FieldValueLanguage
dc.contributor.authorLophitis, Neophytos-
dc.contributor.authorAntoniou, M.-
dc.contributor.authorUdrea, F.-
dc.contributor.authorNistor, I.-
dc.contributor.authorArnold, M.-
dc.contributor.authorWikstrom, T.-
dc.contributor.authorVobecky, J.-
dc.contributor.authorRahimo, M.-
dc.date.accessioned2024-11-29T07:39:13Z-
dc.date.available2024-11-29T07:39:13Z-
dc.date.issued2014-
dc.identifier.citationProceedings of the International Symposium on Power Semiconductor Devices and ICs, 2014, pp. 123 - 126en_US
dc.identifier.isbn9781479929177-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/33226-
dc.description.abstractIn this paper we introduce a new GCT design, namely the Stripe Fortified GCT, for the purpose of maximizing the controllable current by optimizing the current flow path in the device during turn-off. The main design of the new device along with variants are introduced. The MCC performance of this novel structure is assessed with a developed two dimensional model for full wafer simulations. Our results show that this new design is a very good candidate for increasing the MCC to values more than 5000A. © 2014 IEEE.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectComputer simulationen_US
dc.subjectCurrent flowsen_US
dc.subjectNew devicesen_US
dc.subjectNovel structuresen_US
dc.subjectTurn offsen_US
dc.subjectTwo dimensional modelen_US
dc.titleThe Stripe Fortified GCT: A new GCT design for maximizing the controllable currenten_US
dc.typeConference Papersen_US
dc.collaborationUniversity of Cambridgeen_US
dc.collaborationABB Switzerland Ltd., Corporate Reasearch, CH-5405 Baden-Dattwil, Switzerlanden_US
dc.collaborationABB Switzerland Ltd., Semiconductors, Ch-5600 Lenzburg, Switzerlanden_US
dc.journalsSubscriptionen_US
dc.countryUnited Kingdomen_US
dc.countrySwitzerlanden_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.relation.conference26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)en_US
dc.identifier.doi10.1109/ISPSD.2014.6855991en_US
dc.identifier.scopus2-s2.0-84905457526-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/84905457526-
cut.common.academicyear2013-2014en_US
dc.identifier.spage123en_US
dc.identifier.epage126en_US
item.openairetypeconferenceObject-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_c94f-
item.languageiso639-1en-
item.fulltextNo Fulltext-
crisitem.author.deptDepartment of Electrical Engineering, Computer Engineering and Informatics-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0901-0876-
crisitem.author.parentorgFaculty of Engineering and Technology-
Appears in Collections:Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation
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