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https://hdl.handle.net/20.500.14279/33177
Τίτλος: | The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor | Συγγραφείς: | Cao, Qinze Gammon, Peter Michael Renz, Arne Benjamin Zhang, Luyang Baker, Guy Antoniou, Marina Lophitis, Neophytos |
Major Field of Science: | Engineering and Technology | Λέξεις-κλειδιά: | IGCT;optimization;Silicon carbide;simulation;thyristor | Ημερομηνία Έκδοσης: | Σεπ-2022 | Πηγή: | IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022, 16-20 September | Conference: | IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe | Περίληψη: | A 15kV SiC thyristor is analysed, considering for the first time the design properties that will ensure the safe, stable operation of the device as an integrated gate commutated thyristor (IGCT), while also minimizing its on-state losses. Key to the optimization is ensuring that, during the turn-off phase, minority carrier charge is commutated via the base to the gate, rather than flowing into the cathode, thus reducing large switching losses, and an unstable transition period. This is made possible in the design presented via the introduction of a highly doped base strip (HDBS), which provides a low resistance channel between the centre of the cathode and the gate. This innovation allows the cathode to be extended, such that it makes up 90% of the top surface, thus minimising on-state losses. | URI: | https://hdl.handle.net/20.500.14279/33177 | ISBN: | 9781665488143 | DOI: | 10.1109/WiPDAEurope55971.2022.9936508 | Rights: | Attribution-NonCommercial-NoDerivatives 4.0 International | Type: | Conference Papers | Affiliation: | University of Warwick The University of Nottingham |
Publication Type: | Peer Reviewed |
Εμφανίζεται στις συλλογές: | Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation |
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