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dc.contributor.authorCao, Qinze-
dc.contributor.authorGammon, Peter Michael-
dc.contributor.authorRenz, Arne Benjamin-
dc.contributor.authorZhang, Luyang-
dc.contributor.authorBaker, Guy-
dc.contributor.authorAntoniou, Marina-
dc.contributor.authorLophitis, Neophytos-
dc.date.accessioned2024-11-15T09:53:30Z-
dc.date.available2024-11-15T09:53:30Z-
dc.date.issued2022-09-
dc.identifier.citationIEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022, 16-20 Septemberen_US
dc.identifier.isbn9781665488143-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/33177-
dc.description.abstractA 15kV SiC thyristor is analysed, considering for the first time the design properties that will ensure the safe, stable operation of the device as an integrated gate commutated thyristor (IGCT), while also minimizing its on-state losses. Key to the optimization is ensuring that, during the turn-off phase, minority carrier charge is commutated via the base to the gate, rather than flowing into the cathode, thus reducing large switching losses, and an unstable transition period. This is made possible in the design presented via the introduction of a highly doped base strip (HDBS), which provides a low resistance channel between the centre of the cathode and the gate. This innovation allows the cathode to be extended, such that it makes up 90% of the top surface, thus minimising on-state losses.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectIGCTen_US
dc.subjectoptimizationen_US
dc.subjectSilicon carbideen_US
dc.subjectsimulationen_US
dc.subjectthyristoren_US
dc.titleThe optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristoren_US
dc.typeConference Papersen_US
dc.collaborationUniversity of Warwicken_US
dc.collaborationThe University of Nottinghamen_US
dc.journalsSubscriptionen_US
dc.countryUnited Kingdomen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.relation.conferenceIEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europeen_US
dc.identifier.doi10.1109/WiPDAEurope55971.2022.9936508en_US
dc.identifier.scopus2-s2.0-85142514256-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/85142514256-
cut.common.academicyear2022-2023en_US
item.fulltextNo Fulltext-
item.languageiso639-1en-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_c94f-
item.cerifentitytypePublications-
item.openairetypeconferenceObject-
crisitem.author.deptDepartment of Electrical Engineering, Computer Engineering and Informatics-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0901-0876-
crisitem.author.parentorgFaculty of Engineering and Technology-
Εμφανίζεται στις συλλογές:Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation
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