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https://hdl.handle.net/20.500.14279/33177
Πεδίο DC | Τιμή | Γλώσσα |
---|---|---|
dc.contributor.author | Cao, Qinze | - |
dc.contributor.author | Gammon, Peter Michael | - |
dc.contributor.author | Renz, Arne Benjamin | - |
dc.contributor.author | Zhang, Luyang | - |
dc.contributor.author | Baker, Guy | - |
dc.contributor.author | Antoniou, Marina | - |
dc.contributor.author | Lophitis, Neophytos | - |
dc.date.accessioned | 2024-11-15T09:53:30Z | - |
dc.date.available | 2024-11-15T09:53:30Z | - |
dc.date.issued | 2022-09 | - |
dc.identifier.citation | IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022, 16-20 September | en_US |
dc.identifier.isbn | 9781665488143 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.14279/33177 | - |
dc.description.abstract | A 15kV SiC thyristor is analysed, considering for the first time the design properties that will ensure the safe, stable operation of the device as an integrated gate commutated thyristor (IGCT), while also minimizing its on-state losses. Key to the optimization is ensuring that, during the turn-off phase, minority carrier charge is commutated via the base to the gate, rather than flowing into the cathode, thus reducing large switching losses, and an unstable transition period. This is made possible in the design presented via the introduction of a highly doped base strip (HDBS), which provides a low resistance channel between the centre of the cathode and the gate. This innovation allows the cathode to be extended, such that it makes up 90% of the top surface, thus minimising on-state losses. | en_US |
dc.format | en_US | |
dc.language.iso | en | en_US |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 International | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | IGCT | en_US |
dc.subject | optimization | en_US |
dc.subject | Silicon carbide | en_US |
dc.subject | simulation | en_US |
dc.subject | thyristor | en_US |
dc.title | The optimisation of a 15 kV 4H-silicon carbide integrated gate commutated thyristor | en_US |
dc.type | Conference Papers | en_US |
dc.collaboration | University of Warwick | en_US |
dc.collaboration | The University of Nottingham | en_US |
dc.journals | Subscription | en_US |
dc.country | United Kingdom | en_US |
dc.subject.field | Engineering and Technology | en_US |
dc.publication | Peer Reviewed | en_US |
dc.relation.conference | IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe | en_US |
dc.identifier.doi | 10.1109/WiPDAEurope55971.2022.9936508 | en_US |
dc.identifier.scopus | 2-s2.0-85142514256 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/85142514256 | - |
cut.common.academicyear | 2022-2023 | en_US |
item.fulltext | No Fulltext | - |
item.languageiso639-1 | en | - |
item.grantfulltext | none | - |
item.openairecristype | http://purl.org/coar/resource_type/c_c94f | - |
item.cerifentitytype | Publications | - |
item.openairetype | conferenceObject | - |
crisitem.author.dept | Department of Electrical Engineering, Computer Engineering and Informatics | - |
crisitem.author.faculty | Faculty of Engineering and Technology | - |
crisitem.author.orcid | 0000-0002-0901-0876 | - |
crisitem.author.parentorg | Faculty of Engineering and Technology | - |
Εμφανίζεται στις συλλογές: | Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation |
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