Antimony-Doped Tin Oxide Hole Injection Interlayer Improving the Efficiency of Perovskite Nanocrystal Light Emitting Diodes

Journal
ACS Applied Optical Materials
Date Issued
March 22, 2024
Author(s)
DOI
10.1021/acsaom.4c00044
Abstract
We present significant performance enhancement of CsPbBr3 perovskite nanocrystal (NC) light emitting diodes (PNC LEDs) by incorporation of a solution processed doped metal oxide hole injection interlayer consisting of 10 atom % doped antimony tin oxide (ATO) within the PNC LEDs device architecture. The incorporation of an ATO interlayer between ITO and poly-TPD improves the bottom electrode hole injection properties and provides charge balanced PNC LEDs that show three and half times increased luminance, lower turn-on voltage, and improved maximum current and power efficiency compared to reference CsPbBr3 PNC LEDs incorporating the commonly used PEDOT:PSS hole injection interlayer.
Subjects

Electrodes

Charge balanced

Interfaces

Hole injection layers...

Doped metal oxides

Perovskite nanocrysta...

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