Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/32583
Title: Antimony-Doped Tin Oxide Hole Injection Interlayer Improving the Efficiency of Perovskite Nanocrystal Light Emitting Diodes
Authors: Ioakeimidis, Apostolos 
Galatopoulos, Fedros 
Athanasiou, M. 
Hauser, A. 
Rossier, M. 
Bodnarchuk, M. I. 
Kovalenko, M. V. 
Itskos, G. 
Choulis, Stelios A. 
Major Field of Science: Engineering and Technology
Field Category: Mechanical Engineering
Keywords: Electrodes;Charge balanced;Interfaces;Hole injection layers;Doped metal oxides;Perovskite nanocrystal light emitting diodes
Issue Date: 22-Mar-2024
Source: ACS Applied Optical Materials, 2024, vol. 2, iss. 3, pp. 528–534
Volume: 2
Issue: 3
Start page: 528
End page: 534
Journal: ACS Applied Optical Materials 
Abstract: We present significant performance enhancement of CsPbBr3 perovskite nanocrystal (NC) light emitting diodes (PNC LEDs) by incorporation of a solution processed doped metal oxide hole injection interlayer consisting of 10 atom % doped antimony tin oxide (ATO) within the PNC LEDs device architecture. The incorporation of an ATO interlayer between ITO and poly-TPD improves the bottom electrode hole injection properties and provides charge balanced PNC LEDs that show three and half times increased luminance, lower turn-on voltage, and improved maximum current and power efficiency compared to reference CsPbBr3 PNC LEDs incorporating the commonly used PEDOT:PSS hole injection interlayer.
URI: https://hdl.handle.net/20.500.14279/32583
ISSN: 27719855
DOI: 10.1021/acsaom.4c00044
Rights: Attribution-NonCommercial-NoDerivatives 4.0 International
Type: Article
Affiliation : Cyprus University of Technology 
University of Cyprus 
Avantama AG 
Empa-Swiss Federal Laboratories for Materials Science and Technology 
Publication Type: Peer Reviewed
Appears in Collections:Άρθρα/Articles

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