Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/2154
Title: | Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti–Zr–N and Ti–Ta–N |
Authors: | Abadias, Gregory Dub, Sergey N. Koutsokeras, Loukas E. |
Major Field of Science: | Engineering and Technology |
Field Category: | Materials Engineering |
Keywords: | Titanium nitride;Magnetron sputtering;Ion plating |
Issue Date: | Jul-2010 |
Source: | Journal of vacuum science and technology A, 2010, vol. 28, no. 4, pp. 541-551 |
Volume: | 28 |
Issue: | 4 |
Start page: | 541 |
End page: | 551 |
Journal: | Journal of Vacuum Science & Technology A |
Abstract: | Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar- N2 plasma discharges at 300 °C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti1-x Zrx N and Ti 1-y Tay N solid solutions with the Na-Cl (B1 -type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by either Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti1-y Ta y N films exhibited superior mechanical properties to Ti 1-x Zrx N films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity ρ ∼65 μΩ cm being obtained for pure ZrN, while for Ti1-y Tay N films a minimum was observed at y∼0.3. The evolution of the different film properties is discussed based on microstructrural investigations |
URI: | https://hdl.handle.net/20.500.14279/2154 |
ISSN: | 15208559 |
DOI: | 10.1116/1.3426296 |
Rights: | © American Vacuum Society |
Type: | Article |
Affiliation: | University of Ioannina |
Affiliation : | University Poitiers University of Ioannina NAS of Ukraine Kharkiv Institute of Physics and Technology CEMHTI |
Publication Type: | Peer Reviewed |
Appears in Collections: | Άρθρα/Articles |
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