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https://hdl.handle.net/20.500.14279/1830
Τίτλος: | Simulation of the electrical characteristics of MOS capacitors on strained-silicon substrates | Συγγραφείς: | Kelaidis, N. Tsamis, Christos Skarlatos, Dimitrios |
Major Field of Science: | Natural Sciences | Field Category: | Physical Sciences | Λέξεις-κλειδιά: | MOSFET devices;Strained silicon;Silicon | Ημερομηνία Έκδοσης: | 29-Οκτ-2008 | Πηγή: | Physica Status Solidi (C), 2008, vol. 5, iss. 12, pp. 3647 - 3650 | Volume: | 5 | Issue: | 12 | Start page: | 3647 | End page: | 3650 | Περιοδικό: | Physica Status Solidi (C) | Περίληψη: | In this work, we analyze the electrical characteristics of MOS capacitors fabricated on strained silicon substrates using the commercial software Taurus/Synopsis. The effect of various parameters such as Germanium concentration in the Si1-xGex virtual substrate, thickness of the strained-Silicon layer, oxide thickness, fixed charge and interface trapped charge on capacitance - voltage characteristics is examined. Experimental data are compared with simulation results. A strong influence of the s-Si/SiGe heterostructure and its proximity to the s-Si/SiO2 on the electrical characteristics of the system exists. Oxide charge inserted into simulation in order to fit experimental data shows an increase of charge with decreasing s-Si thickness. The effect of interface traps on simulated C-V characteristics is identical when traps are situated in the s-Si/SiO2 or the s-Si/SiGe interface. When increasing the thermal budget by increasing the post oxidation annealing time, the decrease of the hump phenomenon on the C-V curves can be attributed to the Germanium diffusion, according to simulation. | URI: | https://hdl.handle.net/20.500.14279/1830 | ISSN: | 16101642 | DOI: | 10.1002/pssc.200780207 | Rights: | © Wiley | Type: | Article | Affiliation: | University of Patras | Affiliation: | IMEL/NCSR Demokritos University of Patras |
Publication Type: | Peer Reviewed |
Εμφανίζεται στις συλλογές: | Άρθρα/Articles |
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