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  4. X-ray stability and response of polymeric photodiodes for imaging applications
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X-ray stability and response of polymeric photodiodes for imaging applications

Journal
Applied Physics Letters
Date Issued
January 28, 2008
Author(s)
Keivanidis, Panagiotis E.  
Greenham, Neil C.  
Sirringhaus, Henning  
Friend, Richard H.  
Blakesley, James C.  
Speller, Robert  
Campoy-Quiles, Mariano  
Agostinelli, Tiziano  
Bradley, Donal D.C.  
Nelson, Jenny  
DOI
10.1063/1.2834364
Abstract
The x-ray stability of photodiodes made of poly(9,9-di- n -octylfluorene-co-benzothiadiazole):perylene diimide, poly[2,7-(9,9-di- n -octylfluorene)-co-(1,4-phenylene-[(4-sec-butylphenyl)imino]-1,4-phenylene)]: perylene diimide and poly(3-hexylthiophene):([6,6]-phenylC61-butyric acid methyl ester) (P3HT:PCBM) blends has been examined up to lifetime doses equivalent to those used in medical x-ray digital imaging applications. Dark currents and external quantum efficiencies (EQEs) are not significantly affected after exposure to 500 Gy. Only in the case of P3HT:PCBM is a significant loss in EQE (17% of the initial value) observed. Possible reasons for the observed changes are proposed. When a scintillation layer is attached to the devices, a linear dependence of the photocurrent on the x-ray dose rate is observed for the three material systems. © 2008 American Institute of Physics.
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