Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1520
Title: | Temperature-induced reflectivity changes and activation of hydrogen sensitive optically thin palladium films on silicon oxide | Authors: | Kalli, Kyriacos Othonos, Andreas S. Christofidès, Constantinos |
metadata.dc.contributor.other: | Καλλή, Κυριάκος | Major Field of Science: | Engineering and Technology | Field Category: | Electrical Engineering - Electronic Engineering - Information Engineering | Keywords: | Palladium;Silicon oxide;Temperature;Hydrogen | Issue Date: | 10-Nov-1998 | Source: | Review of Scientific Instruments, 1998, vol. 69, no. 9, pp. 3331-3338 | Volume: | 69 | Issue: | 9 | Start page: | 3331 | End page: | 3338 | Journal: | Review of Scientific Instruments | Abstract: | The optical properties of several thin metal film palladium-silicon oxide structures are examined at room temperature before and after annealing to 200°C and also at 90°C - in all cases in the presence of hydrogen gas. Multicycling sample activation is shown to occur in the presence of hydrogen at room temperature with an increase in reflectivity on exposure to hydrogen, in contrast to thicker 80 Å films. The reflectivity change increases with increasing film thickness (1-10Å). The surface activation at room temperature, before and after annealing to 200°C, is compared with the performance at 90°C, where it is shown that heat treatment strongly influences the behavior of the metal film. | URI: | https://hdl.handle.net/20.500.14279/1520 | ISSN: | 00346748 | DOI: | 10.1063/1.1149116 | Rights: | © American Institute of Physics | Type: | Article | Affiliation: | University of Cyprus | Affiliation : | University of Cyprus Linköping Institute of Technology |
Publication Type: | Peer Reviewed |
Appears in Collections: | Άρθρα/Articles |
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