Παρακαλώ χρησιμοποιήστε αυτό το αναγνωριστικό για να παραπέμψετε ή να δημιουργήσετε σύνδεσμο προς αυτό το τεκμήριο: https://hdl.handle.net/20.500.14279/1443
Τίτλος: Interfacial stability and atomistic processes in the a-c/si(100) heterostructure system
Συγγραφείς: Gioti, Maria 
Logothetidis, Stergios D. 
Kelires, Pantelis C. 
metadata.dc.contributor.other: Κελίρης, Παντελής
Major Field of Science: Natural Sciences
Λέξεις-κλειδιά: Heterostructures;Carbon;Ellipsometry
Ημερομηνία Έκδοσης: 1999
Πηγή: Physical Review B, 1999, vol. 59, no. 7, pp. 5074-5081
Volume: 59
Issue: 7
Start page: 5074
End page: 5081
Περιοδικό: Physical Review B 
Περίληψη: We study the interfacial properties of thin amorphous carbon films grown on silicon (100) substrates. By combining experimental spectroscopic ellipsometry and stress measurements and theoretical Monte Carlo simulations, we show that significant interdiffusion takes place at the initial stages of growth, driven by a strain mediated mechanism, and we identify the relevant atomistic processes.
URI: https://hdl.handle.net/20.500.14279/1443
ISSN: 10980121
DOI: 10.1103/PhysRevB.59.5074
Rights: © American Physical Society
Type: Article
Affiliation: University of Crete 
Affiliation: University of Crete 
Foundation for Research & Technology-Hellas (F.O.R.T.H.) 
Aristotle University of Thessaloniki 
Publication Type: Peer Reviewed
Appears in Collections:Άρθρα/Articles

CORE Recommender
Sorry the service is unavailable at the moment. Please try again later.
Show full item record

SCOPUSTM   
Citations

22
checked on Nov 9, 2023

WEB OF SCIENCETM
Citations 50

22
Last Week
0
Last month
0
checked on Oct 31, 2023

Page view(s)

396
Last Week
20
Last month
0
checked on Feb 23, 2025

Google ScholarTM

Check

Altmetric


Items in KTISIS are protected by copyright, with all rights reserved, unless otherwise indicated.