Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1443
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Gioti, Maria | - |
dc.contributor.author | Logothetidis, Stergios D. | - |
dc.contributor.author | Kelires, Pantelis C. | - |
dc.contributor.other | Κελίρης, Παντελής | - |
dc.date.accessioned | 2013-03-05T10:30:31Z | en |
dc.date.accessioned | 2013-05-17T05:22:54Z | - |
dc.date.accessioned | 2015-12-02T10:13:33Z | - |
dc.date.available | 2013-03-05T10:30:31Z | en |
dc.date.available | 2013-05-17T05:22:54Z | - |
dc.date.available | 2015-12-02T10:13:33Z | - |
dc.date.issued | 1999 | - |
dc.identifier.citation | Physical Review B, 1999, vol. 59, no. 7, pp. 5074-5081 | en_US |
dc.identifier.issn | 10980121 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.14279/1443 | - |
dc.description.abstract | We study the interfacial properties of thin amorphous carbon films grown on silicon (100) substrates. By combining experimental spectroscopic ellipsometry and stress measurements and theoretical Monte Carlo simulations, we show that significant interdiffusion takes place at the initial stages of growth, driven by a strain mediated mechanism, and we identify the relevant atomistic processes. | en_US |
dc.format | en_US | |
dc.language.iso | en | en_US |
dc.relation.ispartof | Physical Review B | en_US |
dc.rights | © American Physical Society | en_US |
dc.subject | Heterostructures | en_US |
dc.subject | Carbon | en_US |
dc.subject | Ellipsometry | en_US |
dc.title | Interfacial stability and atomistic processes in the a-c/si(100) heterostructure system | en_US |
dc.type | Article | en_US |
dc.affiliation | University of Crete | en |
dc.collaboration | University of Crete | en_US |
dc.collaboration | Foundation for Research & Technology-Hellas (F.O.R.T.H.) | en_US |
dc.collaboration | Aristotle University of Thessaloniki | en_US |
dc.journals | Hybrid Open Access | en_US |
dc.country | Greece | en_US |
dc.subject.field | Natural Sciences | en_US |
dc.publication | Peer Reviewed | en_US |
dc.identifier.doi | 10.1103/PhysRevB.59.5074 | en_US |
dc.dept.handle | 123456789/54 | en |
dc.relation.issue | 7 | en_US |
dc.relation.volume | 59 | en_US |
cut.common.academicyear | 1999-2000 | en_US |
dc.identifier.spage | 5074 | en_US |
dc.identifier.epage | 5081 | en_US |
item.openairetype | article | - |
item.cerifentitytype | Publications | - |
item.fulltext | No Fulltext | - |
item.grantfulltext | none | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.languageiso639-1 | en | - |
crisitem.author.dept | Department of Mechanical Engineering and Materials Science and Engineering | - |
crisitem.author.faculty | Faculty of Engineering and Technology | - |
crisitem.author.orcid | 0000-0002-0268-259X | - |
crisitem.author.parentorg | Faculty of Engineering and Technology | - |
crisitem.journal.journalissn | 2469-9969 | - |
crisitem.journal.publisher | American Physical Society | - |
Appears in Collections: | Άρθρα/Articles |
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