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https://hdl.handle.net/20.500.14279/1443| Title: | Interfacial stability and atomistic processes in the a-c/si(100) heterostructure system | Authors: | Gioti, Maria Logothetidis, Stergios D. Kelires, Pantelis C. |
metadata.dc.contributor.other: | Κελίρης, Παντελής | Major Field of Science: | Natural Sciences | Keywords: | Heterostructures;Carbon;Ellipsometry | Issue Date: | 1999 | Source: | Physical Review B, 1999, vol. 59, no. 7, pp. 5074-5081 | Volume: | 59 | Issue: | 7 | Start page: | 5074 | End page: | 5081 | Journal: | Physical Review B | Abstract: | We study the interfacial properties of thin amorphous carbon films grown on silicon (100) substrates. By combining experimental spectroscopic ellipsometry and stress measurements and theoretical Monte Carlo simulations, we show that significant interdiffusion takes place at the initial stages of growth, driven by a strain mediated mechanism, and we identify the relevant atomistic processes. | URI: | https://hdl.handle.net/20.500.14279/1443 | ISSN: | 10980121 | DOI: | 10.1103/PhysRevB.59.5074 | Rights: | © American Physical Society | Type: | Article | Affiliation: | University of Crete | Affiliation : | University of Crete Foundation for Research & Technology-Hellas (F.O.R.T.H.) Aristotle University of Thessaloniki |
Publication Type: | Peer Reviewed |
| Appears in Collections: | Άρθρα/Articles |
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