Interfacial stability and atomistic processes in the a-c/si(100) heterostructure system

Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1443

Title:	Interfacial stability and atomistic processes in the a-c/si(100) heterostructure system
Authors:	Gioti, Maria Logothetidis, Stergios D. Kelires, Pantelis C.
metadata.dc.contributor.other:	Κελίρης, Παντελής
Major Field of Science:	Natural Sciences
Keywords:	Heterostructures;Carbon;Ellipsometry
Issue Date:	1999
Source:	Physical Review B, 1999, vol. 59, no. 7, pp. 5074-5081
Volume:	59
Issue:	7
Start page:	5074
End page:	5081
Journal:	Physical Review B
Abstract:	We study the interfacial properties of thin amorphous carbon films grown on silicon (100) substrates. By combining experimental spectroscopic ellipsometry and stress measurements and theoretical Monte Carlo simulations, we show that significant interdiffusion takes place at the initial stages of growth, driven by a strain mediated mechanism, and we identify the relevant atomistic processes.
URI:	https://hdl.handle.net/20.500.14279/1443
ISSN:	10980121
DOI:	10.1103/PhysRevB.59.5074
Rights:	© American Physical Society
Type:	Article
Affiliation:	University of Crete
Affiliation :	University of Crete Foundation for Research & Technology-Hellas (F.O.R.T.H.) Aristotle University of Thessaloniki
Publication Type:	Peer Reviewed
Appears in Collections:	Άρθρα/Articles

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