Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/13416
Title: Optimisation and Simulation of RC Time Constants in Snubber Circuits
Authors: Mohanram, Sat 
Darwish, Mohamed 
Marouchos, Christos 
metadata.dc.contributor.other: Μαρούχος, Χρίστος
Major Field of Science: Engineering and Technology
Field Category: Electrical Engineering - Electronic Engineering - Information Engineering
Keywords: Hard switching;Input-output parameters;Simulation;Snubber Circuit (RC);Switching frequency;Losses;TC Optimizations
Issue Date: Nov-2018
Source: 53rd International Universities Power Engineering Conference, 2018, 4-7 September, Glasgow, United Kingdom;
Conference: International Universities Power Engineering Conference 
Abstract: Semiconductor devices are subjected to elevated levels of stresses when used at high voltage high current and temperature applications. This stress is mainly due to hard switching which is proportional to the switching frequency. This paper presents methods used to remove this energy to prevent expensive switch damage due to overheating and high dv/dt oscillations. In confirmation of the research title, the process in the determination of 'RC' in snubber circuits has been proven by OrCAD optimisation and presented.
URI: https://hdl.handle.net/20.500.14279/13416
DOI: 10.1109/UPEC.2018.8542111
Rights: © 2018 IEEE.
Type: Conference Papers
Affiliation : Brunel University 
Cyprus University of Technology 
Appears in Collections:Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation

CORE Recommender
Show full item record

SCOPUSTM   
Citations 50

1
checked on Nov 6, 2023

Page view(s) 50

342
Last Week
0
Last month
9
checked on Nov 21, 2024

Google ScholarTM

Check

Altmetric


Items in KTISIS are protected by copyright, with all rights reserved, unless otherwise indicated.