Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/13416
Title: | Optimisation and Simulation of RC Time Constants in Snubber Circuits | Authors: | Mohanram, Sat Darwish, Mohamed Marouchos, Christos |
metadata.dc.contributor.other: | Μαρούχος, Χρίστος | Major Field of Science: | Engineering and Technology | Field Category: | Electrical Engineering - Electronic Engineering - Information Engineering | Keywords: | Hard switching;Input-output parameters;Simulation;Snubber Circuit (RC);Switching frequency;Losses;TC Optimizations | Issue Date: | Nov-2018 | Source: | 53rd International Universities Power Engineering Conference, 2018, 4-7 September, Glasgow, United Kingdom; | Conference: | International Universities Power Engineering Conference | Abstract: | Semiconductor devices are subjected to elevated levels of stresses when used at high voltage high current and temperature applications. This stress is mainly due to hard switching which is proportional to the switching frequency. This paper presents methods used to remove this energy to prevent expensive switch damage due to overheating and high dv/dt oscillations. In confirmation of the research title, the process in the determination of 'RC' in snubber circuits has been proven by OrCAD optimisation and presented. | URI: | https://hdl.handle.net/20.500.14279/13416 | DOI: | 10.1109/UPEC.2018.8542111 | Rights: | © 2018 IEEE. | Type: | Conference Papers | Affiliation : | Brunel University Cyprus University of Technology |
Appears in Collections: | Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation |
CORE Recommender
SCOPUSTM
Citations
50
1
checked on Nov 6, 2023
Page view(s) 50
345
Last Week
0
0
Last month
6
6
checked on Dec 22, 2024
Google ScholarTM
Check
Altmetric
Items in KTISIS are protected by copyright, with all rights reserved, unless otherwise indicated.