The effect of pressure on the radiative efficiency of InAs based light emitting diodes
File(s)
Journal
Physica status solidi (B) Basic research
Date Issued
January 30, 2003
Abstract
The spontaneous emission of 3.3 μm light emitting diodes (LEDs) and lasers based on InAs alloys were studied as a function of hydrostatic pressure. An increase in light output with increasing pressure has been observed, with a general comparison of the performances of type I and type II structures given in terms of the radiative and non-radiative processes involved. The experimental results provide evidence that the so-called CHSH Auger process is insignificant in these devices. However, Auger recombination mechanisms are still shown to dominate the response of these type II LEDs in contrast to type I lasers where competing radiative processes appear more significant