Stability and interdiffusion at the a-c/si(100) interface
Journal
Journal of Non-Crystalline Solids
Date Issued
May 1998
Abstract
Experimental ellipsometry measurements and theoretical Monte Carlo simulations reveal that interdiffusion takes place during the growth of amorphous carbon layers on Si(100) substrates. Intermixing is shown to be a strain mediated mechanism resulting in partial relief of local stresses both in the amorphous layer, as well as in the substrate layers near the interface.