Trench Etch Processing for SiC Superjunction Schottky Diodes
Journal
Materials Science Forum
Date Issued
January 1, 2025
Abstract
This study focuses on the trench etching process for the fabrication of SiC Superjunction Schottky diodes, utilizing an ICP-RIE technique. Through a series of experiments, we optimized the etching parameters, including ICP power, RF power, and SF6 gas flow rates, to achieve etching rates ranging from 157 nm/min to 372.1 nm/min. Additionally, the study identified the performance of the hard mask as a critical issue during the etching process, which was improved by reducing the RF power below 80 w. The deepest trench achieved reached a depth of 21 μm at 75 w RF power, 1000 w ICP power and 40 sccm SF6, confirming the feasibility of this approach for fabricating high-performance SiC superjunction devices.
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MSF.1159.21.pdf
Size
1.34 MB
Format
Adobe PDF
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