Equilibrium alloy properties by direct simulation: oscillatory segregation at the si-ge(100) 2×1 surface
File(s)
Journal
Physical review letters
Date Issued
1989
Author(s)
Abstract
We study surface and bulk equilibrium in Si-Ge alloys by direct simulation. The composition at a reconstructed (100) surface varies with depth in a complex oscillatory way. Lateral ordering occurs even in the fourth layer, driven by the local stress field. The bulk phase diagram is well described by regular solution theory.
Subjects