Theoretical investigation of the equilibrium surface structure of si1-x-ygexcy alloys
Journal
Surface Science
Date Issued
December 5, 1998
Author(s)
Abstract
We investigate the surface structure of SiGeC alloys at typical growth temperatures using Monte Carlo simulations within the empirical potential formalism. We find a strong tendency of carbon to segregate to the top layer. As a consequence, germanium segregation is drastically reduced. The carbon composition profile oscillates in the subsurface layers, with a marked enhancement in the third layer. Si-C dimers are the favored surface bonding geometry, and are mostly found in (2 × 2) and c(4 × 2) arrangements.