Results 1-5 of 5 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
11-Jan-2022Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBTAlmpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Udrea, Florin ; Mawby, Philip ; Lophitis, Neophytos 
21-Sep-2020Integrated Gate Commutated Thyristor: From Trench to PlanarVemulapati, Umamaheswara ; Stiasny, Thomas ; Wikstrom, Tobias ; Lophitis, Neophytos ; Udrea, Florin 
31-May-2019Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: Benefits & constraintsTiwari, Amit K. ; Udrea, Florin ; Lophitis, Neophytos ; Antoniou, Marina 
422-Jun-2017On the Investigation of the "anode Side" SuperJunction IGBT Design ConceptAntoniou, Marina ; Lophitis, Neophytos ; Udrea, Florin ; Bauer, Friedhelm ; Vemulapati, Umamaheswara Reddy ; Badstuebner, Uwe 
525-Jul-20164.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anodeLophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Vemulapati, Umamaheswara ; Arnold, Martin ; Rahimo, Munaf ; Vobecky, Jan