Choulis, Stelios A. (rp00013)

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	Issue Date	Title	Author(s)	Journal
101	30-Jan-2003	Pressure and k · p studies of band parameters in dilute-N GaInNAs/GaAs multiple quantum wells	Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S.	Physica status solidi (B) Basic research
102	Jan-2003	Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studies	Choulis, Stelios A. ; Tomić, Stanko S. ; O'Reilly, Eoin P O	Solid State Communications
103	30-Oct-2002	Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies	Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S.	Physical Review B
104	19-Dec-2001	Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers	Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Klar, Peter J.	Applied Physics Letters
105	9-Jan-2001	Effects of confinement on the coupling between nitrogen and band states in InGaAs1-xNx/GaAs (x ≤ 0.025) structures: pressure and temperature studies	Choulis, Stelios A. ; Weinstein, Bernard A. ; Hosea, Thomas Jeff Cockburn	Physica status solidi (B) Basic research
106	2001	Growth characterisation of InxGa1-xAs/GaAs/AIAs vertical-cavity surface-emitting laser structure using photomodulated reflectance	Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn	IEE proceedings: optoelectronics