Choulis, Stelios A. (rp00013)

Network Lab View Statistics Email Alert RSS Feed

Results 101-105 of 105 (Search time: 0.008 seconds).

Refman EndNote Bibtex RefWorks Excel CSV PDF Send via email

	Issue Date	Title	Author(s)	Journal
101	Jan-2003	Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studies	Choulis, Stelios A. ; Tomić, Stanko S. ; O'Reilly, Eoin P O	Solid State Communications
102	30-Oct-2002	Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies	Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S.	Physical Review B
103	19-Dec-2001	Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers	Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Klar, Peter J.	Applied Physics Letters
104	9-Jan-2001	Effects of confinement on the coupling between nitrogen and band states in InGaAs1-xNx/GaAs (x ≤ 0.025) structures: pressure and temperature studies	Choulis, Stelios A. ; Weinstein, Bernard A. ; Hosea, Thomas Jeff Cockburn	Physica status solidi (B) Basic research
105	2001	Growth characterisation of InxGa1-xAs/GaAs/AIAs vertical-cavity surface-emitting laser structure using photomodulated reflectance	Choulis, Stelios A. ; Hosea, Thomas Jeff Cockburn	IEE proceedings: optoelectronics