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| Issue Date | Title | Author(s) |
| 5-Aug-2024 | 3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance | Melnyk, Kyrylo ; Renz, Arne Benjamin ; Cao, Qinze ; Gammon, Peter Michael ; Lophitis, Neophytos ; Maresca, Luca ; Irace, Andrea ; Nistor, Iulian ; Rahimo, Munaf ; Antoniou, Marina |
| 1-Sep-2024 | 3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance | Melnyk, Kyrylo ; Renz, Arne Benjamin ; Cao, Qinze ; Gammon, Peter Michael ; Lophitis, Neophytos ; Maresca, Luca ; Irace, Andrea ; Nistor, Iulian ; Rahimo, Munaf ; Antoniou, Marina |
| 1-Jun-2025 | Optimisation of the Fabrication of Sidewall-Implanted Trenches in a 3.3 kV SiC Semi-Superjunction Schottky Barrier Diode | Renz, Arne Benjamin ; Melnyk, Kyrylo ; Iosifidis, Nikolaos ; Jefferies, Richard ; Zignale, Marco ; Fiorenza, Patrick ; Maresca, Luca ; Irace, Andrea ; Roccaforte, Fabrizio ; Lophitis, Neophytos ; Gammon, Peter Michael ; Antoniou, Marina |
| 25-Jun-2025 | Optimization of the buffer layer in a 15kV SiC N-type gate commutated thyristor for safe, low-loss switching | Cao, Qinze ; Lophitis, Neophytos ; Renz, Arne Benjamin ; Melnyk, Kyrylo ; Antoniou, Marina ; Gammon, Peter Michael |
| 1-Jan-2023 | Robust and Area Efficient 4H-SiC 1.2 and 3.3 kV Floating Field Ring (FFR) and Trench-FFR Termination Designs and Analysis | Melnyk, Kyrylo ; Gammon, Peter Michael ; Renz, Arne Benjamin ; Cao, Quize ; Lophitis, Neophytos ; Antoniou, Marina |
| 2025 | Static and Short-Circuit Performance Analysis of the 4H-SiC 3.3 kV Trench Semi-SJ MOSFET | Melnyk, Kyrylo ; Renz, Arne B. ; Kotagama, Virendra ; Cao, Qinze ; Iosifidis, Nikolaos ; Gammon, Peter M. ; Gott, James A. ; Shah, Vishal A. ; Lophitis, Neophytos ; Rahimo, Munaf ; Nistor, Iulian ; Maresca, Luca ; Irace, Andrea ; Antoniou, Marina |
| 1-Jan-2025 | Trench Etch Processing for SiC Superjunction Schottky Diodes | Cao, Qinze ; Renz, Arne Benjamin ; Gammon, Peter M. ; Lophitis, Neophytos ; Melnyk, Kyrylo ; Antoniou, Marina |
