Trench Etch Processing for SiC Superjunction Schottky Diodes
Journal
Materials Science Forum
Date Issued
January 1, 2025
DOI
10.4028/p-kHnn3Q
Abstract
This study focuses on the trench etching process for the fabrication of SiC Superjunction Schottky diodes, utilizing an ICP-RIE technique. Through a series of experiments, we optimized the etching parameters, including ICP power, RF power, and SF6 gas flow rates, to achieve etching rates ranging from 157 nm/min to 372.1 nm/min. Additionally, the study identified the performance of the hard mask as a critical issue during the etching process, which was improved by reducing the RF power below 80 w. The deepest trench achieved reached a depth of 21 μm at 75 w RF power, 1000 w ICP power and 40 sccm SF6, confirming the feasibility of this approach for fabricating high-performance SiC superjunction devices.
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MSF.1159.21.pdf
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1.34 MB
Format
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