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| Issue Date | Title | Author(s) |
| 1-May-2023 | 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency | Almpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
| 1-Mar-2020 | A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes | Arvanitopoulos, Anastasios E. ; Antoniou, Marina ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Mawby, Philip ; Lophitis, Neophytos |
| 1-Sep-2021 | Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes | Arvanitopoulos, Anastasios E. ; Li, Fan ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Mawby, Philip ; Antoniou, Marina ; Lophitis, Neophytos |
| 1-Sep-2019 | Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes | Arvanitopoulos, A. ; Li, F. ; Jennings, M. R. ; Perkins, S. ; Gyftakis, K. N. ; Antoniou, M. ; Mawby, Philip ; Lophitis, Neophytos |
| 1-Jan-2022 | Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT | Almpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Udrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
| 13-Jan-2024 | Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement | Almpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
| 2024 | Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement | Almpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
