1. Ktisis Cyprus University of Technology
  2. Ερευνητικά Αποτελέσματα

Περιήγηση με Συγγραφέας Hosea, Thomas Jeff Cockburn

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Ημερομηνία ΈκδοσηςΤίτλοςΣυγγραφέας
9-Ιαν-2001Effects of confinement on the coupling between nitrogen and band states in InGaAs1-xNx/GaAs (x ≤ 0.025) structures: pressure and temperature studiesChoulis, Stelios A. ; Weinstein, Bernard A. ; Hosea, Thomas Jeff Cockburn 
30-Οκτ-2002Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studiesChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S. 
2001Growth characterisation of InxGa1-xAs/GaAs/AIAs vertical-cavity surface-emitting laser structure using photomodulated reflectanceChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn 
19-Δεκ-2001Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasersChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Klar, Peter J. 
Αυγ-2003Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopyChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Ghosh, Sandip Kumar 
30-Ιαν-2003Pressure and k · p studies of band parameters in dilute-N GaInNAs/GaAs multiple quantum wellsChoulis, Stelios A. ; Hosea, Thomas Jeff Cockburn ; Tomić, Stanko S. 
Εμφάνιση αποτελεσμάτων 1 έως 6 από 6