Cesium-doped zinc oxide as electron selective contact in inverted organic photovoltaics
Journal
Applied Physics Letters
Date Issued
June 2013
Author(s)
DOI
10.1063/1.4811088
Abstract
Water based sol-gel processed Cesium-doped Zinc oxide (CZO) with low processing annealing temperature is introduced as an efficient electron selective contact in inverted Organic Photovoltaics (OPVs). The corresponding inverted OPVs not only demonstrate similar performance compared to the well-established sol-gel processed ZnO inverted devices but also maintain their functionality when thick layers of CZO, suitable for the up scaling scenario of OPVs have been used. The three orders of magnitude higher conductivity of CZO than ZnO in combination with the high transmittance above 80%, makes this doped oxide a suitable electron selective contact for the low-cost, roll-to-roll printing process of OPVs.

