Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/9848
DC FieldValueLanguage
dc.contributor.authorSavva, Achilleas-
dc.contributor.authorChoulis, Stelios A.-
dc.date.accessioned2017-02-23T10:58:46Z-
dc.date.available2017-02-23T10:58:46Z-
dc.date.issued2013-06-
dc.identifier.citationApplied Physics Letters, 2013, vol. 102, no. 23en_US
dc.identifier.issn00036951-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/9848-
dc.description.abstractWater based sol-gel processed Cesium-doped Zinc oxide (CZO) with low processing annealing temperature is introduced as an efficient electron selective contact in inverted Organic Photovoltaics (OPVs). The corresponding inverted OPVs not only demonstrate similar performance compared to the well-established sol-gel processed ZnO inverted devices but also maintain their functionality when thick layers of CZO, suitable for the up scaling scenario of OPVs have been used. The three orders of magnitude higher conductivity of CZO than ZnO in combination with the high transmittance above 80%, makes this doped oxide a suitable electron selective contact for the low-cost, roll-to-roll printing process of OPVs.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rights© ResearchGateen_US
dc.subjectPolymer solar-cellsen_US
dc.subjectLayeren_US
dc.subjectPerformanceen_US
dc.subjectFilmsen_US
dc.titleCesium-doped zinc oxide as electron selective contact in inverted organic photovoltaicsen_US
dc.typeArticleen_US
dc.collaborationCyprus University of Technologyen_US
dc.subject.categoryPhysical Sciencesen_US
dc.journalsSubscriptionen_US
dc.countryCyprusen_US
dc.subject.fieldNatural Sciencesen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1063/1.4811088en_US
dc.relation.issue23en_US
dc.relation.volume102en_US
cut.common.academicyear2012-2013en_US
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.languageiso639-1en-
item.fulltextNo Fulltext-
crisitem.journal.journalissn1077-3118-
crisitem.journal.publisherAmerican Institute of Physics-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0001-6454-5788-
crisitem.author.orcid0000-0002-7899-6296-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.author.parentorgFaculty of Engineering and Technology-
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