Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/9120
Title: The appearance of Ti3+ states in solution-processed TiOx buffer layers in inverted organic photovoltaics
Authors: Zhidkov, Ivan S. 
McLeod, John A. 
Kurmaev, Ernst Z. 
Korotin, Michael A. 
Kukharenko, Andrey I. 
Savva, Achilleas 
Choulis, Stelios A. 
Korotin, Dm M. 
Cholakh, Seif O. 
metadata.dc.contributor.other: Σάββα, Αχιλλέας
Χούλης, Στέλιος
Major Field of Science: Engineering and Technology
Field Category: Mechanical Engineering
Keywords: Organic photovoltaic (OPV);Electronic structure;Energy gap
Issue Date: 11-Jul-2016
Source: Applied Physics Letters, 2016, vol. 109, no. 2
Volume: 109
Issue: 2
Journal: Applied Physics Letters 
Abstract: We study the low-temperature solution processed TiOx films and device structures using core level and valence X-ray photoelectron spectroscopy (XPS) and electronic structure calculations. We are able to correlate the fraction of Ti3+ present as obtained from Ti 2p core level XPS with the intensity of the defect states that appear within the band gap as observed with our valence XPS. Constructing an operating inverted organic photovoltaic (OPV) using the TiOx film as an electron selective contact may increase the fraction of Ti3+ present. We provide evidence that the number of charge carriers in TiOx can be significantly varied and this might influence the performance of inverted OPVs.
URI: https://hdl.handle.net/20.500.14279/9120
ISSN: 10773118
DOI: 10.1063/1.4958892
Rights: © American Institute of Physics
Type: Article
Affiliation : Ural Federal University 
Soochow University 
Cyprus University of Technology 
Appears in Collections:Άρθρα/Articles

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