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Πεδίο DCΤιμήΓλώσσα
dc.contributor.authorArvanitopoulos, Anastasios-
dc.contributor.authorAntoniou, Marina-
dc.contributor.authorLi, Fan-
dc.contributor.authorJennings, Mike R.-
dc.contributor.authorPerkins, Samuel-
dc.contributor.authorGyftakis, Konstantinos-
dc.contributor.authorLophitis, Neophytos-
dc.date.accessioned2024-11-05T10:48:06Z-
dc.date.available2024-11-05T10:48:06Z-
dc.date.issued2021-10-11-
dc.identifier.citationIEEE Transactions on Industry Applications, 2022, 2021, vol. 58, iss. 1, pp. 565 - 575en_US
dc.identifier.issn00939994-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/33142-
dc.description.abstractThe cubic polytype (3C-) of silicon carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the wide band gap characteristics make it an excellent choice for power metal oxide semiconductor field effect transistors (mosfets). It can be grown on silicon (Si) substrates which is itself advantageous. However, the allowable annealing temperature is limited by the melting temperature of Si. Hence, devices making use of 3C-SiC on Si substrate technology suffer from poor or even almost negligible activation of the p-type dopants after ion implantation due to the relatively low allowable annealing temperature. In this article, a novel process flow for a vertical 3C-SiC-on-Si mosfet is presented to overcome the difficulties that currently exist in obtaining a p-body region through implantation. The proposed design has been accurately simulated with technology computer-aided design process and device software. To ensure reliable prediction, a previously validated set of material models has been used. Further, a channel mobility physics model was developed and validated against experimental data. The output characteristics of the proposed device demonstrated promising performance, what is potentially the solution needed and a huge step toward the realization of 3C-SiC-on-Si mosfets with commercially grated characteristics.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofIEEE Transactions on Industry Applicationsen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subject3C-SiC-on-Sien_US
dc.subjectmosfetsen_US
dc.subjectsilicon carbideen_US
dc.subjectstopping and range of ions in matter (SRIM)en_US
dc.subjecttechnology computer-aided design (TCAD)en_US
dc.subjectwide band gapen_US
dc.title3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitationsen_US
dc.typeArticleen_US
dc.collaborationConcordia Universityen_US
dc.collaborationUniversity of Nottinghamen_US
dc.collaborationUniversity of Warwicken_US
dc.collaborationSwansea Universityen_US
dc.collaborationCoventry Universityen_US
dc.collaborationUniversity of Edinburghen_US
dc.journalsOpen Accessen_US
dc.countryCanadaen_US
dc.countryUnited Kingdomen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1109/TIA.2021.3119269en_US
dc.identifier.scopus2-s2.0-85117321268-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/85117321268-
dc.relation.issue1en_US
dc.relation.volume58en_US
cut.common.academicyear2021-2022en_US
dc.identifier.spage565en_US
dc.identifier.epage575en_US
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.cerifentitytypePublications-
item.openairetypearticle-
crisitem.author.deptDepartment of Electrical Engineering, Computer Engineering and Informatics-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0901-0876-
crisitem.author.parentorgFaculty of Engineering and Technology-
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