Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/18175
Title: | Organic semiconductor devices for X-ray imaging | Authors: | Blakesley, James C. Keivanidis, Panagiotis E. Campoy-Quiles, Mariano Newman, Christopher R. Jin, Y. Speller, Robert Sirringhaus, Henning Greenham, Neil C. Nelson, Jenny Stavrinou, Paul N. |
Major Field of Science: | Engineering and Technology | Field Category: | Mechanical Engineering | Keywords: | Organic semiconductors;Conjugated polymers;Digital radiography | Issue Date: | 21-Sep-2007 | Source: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007, vol. 580, iss. 1, pp. 774-777 | Volume: | 580 | Issue: | 1 | Start page: | 774 | End page: | 777 | Journal: | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | Abstract: | We investigate the potential for replacing inorganic semiconductors with polymeric semiconductors in medical X-ray imaging applications. Polymeric semiconductors are soft and can be fabricated using techniques such as spin coating and jet printing, leading to reductions in fabrication costs for large-area arrays, easy integration of heterostructures and composite materials and the possibility of using flexible substrates. By using a combined cascaded linear systems and Monte-Carlo model to simulate the imaging system, we establish a set of semiconductor requirements for a feasible flat-panel imager (FPI). We have fabricated photodiodes and thin-film transistors (TFTs) out of a variety of polymer materials. Polymer photodiodes coupled to phosphor screens have shown a response to X-ray radiation with a good efficiency. Both transistors and photodiodes were sufficiently radiation hard for use in clinical imaging conditions. A composite phosphor-polymer material has been fabricated and has been found to be compatible with polymeric photodiodes. The composite material can be fabricated within a structure as part of the semiconductor fabrication process. © 2007 Elsevier B.V. All rights reserved. | ISSN: | 01689002 | DOI: | 10.1016/j.nima.2007.05.105 | Rights: | © Elsevier | Type: | Article | Affiliation : | University College London University of Cambridge Imperial College London |
Publication Type: | Peer Reviewed |
Appears in Collections: | Άρθρα/Articles |
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