Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1599
Title: Stress and composition of c-induced ge dots on si(100)
Authors: Hadjisavvas, George C. 
Sonnet, Philippe 
Kelires, Pantelis C. 
metadata.dc.contributor.other: Κελίρης, Παντελής
Major Field of Science: Engineering and Technology
Field Category: ENGINEERING AND TECHNOLOGY
Keywords: Carbon;Germanium;Silicon;Geometry
Issue Date: 9-Jun-2003
Source: Physical Review B - Condensed Matter and Materials Physics, 2003, vol. 67, no. 24, pp. 2413021-2413024
Volume: 67
Issue: 24
Start page: 2413021
End page: 2413024
Journal: Physical Review B 
Abstract: Monte Carlo simulations shed light on the stress field and composition of C-induced Ge islands on Si(100). It is shown that the dots do not contain C, under any conditions of temperature and coverage, but have a gradual composition profile from SiGe at the bottom to Ge at the apex. The average compressive stress in the islands is considerably reduced compared to the pure Ge/Si case. At low Ge coverage, the top substrate layer around the dots is enriched with Si-C dimers. At high Ge contents, Ge wets the surface and covers the predeposited C geometries. We predict enhancement of Ge content in the islands upon C incorporation.
URI: https://hdl.handle.net/20.500.14279/1599
ISSN: 10980121
DOI: 10.1103/PhysRevB.67.241302
Rights: © The American Physical Society.
Attribution-NonCommercial-NoDerivs 3.0 United States
Type: Article
Affiliation: University of Crete 
Affiliation : University of Crete 
Publication Type: Peer Reviewed
Appears in Collections:Άρθρα/Articles

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