Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1599
Title: | Stress and composition of c-induced ge dots on si(100) |
Authors: | Hadjisavvas, George C. Sonnet, Philippe Kelires, Pantelis C. |
metadata.dc.contributor.other: | Κελίρης, Παντελής |
Major Field of Science: | Engineering and Technology |
Field Category: | ENGINEERING AND TECHNOLOGY |
Keywords: | Carbon;Germanium;Silicon;Geometry |
Issue Date: | 9-Jun-2003 |
Source: | Physical Review B - Condensed Matter and Materials Physics, 2003, vol. 67, no. 24, pp. 2413021-2413024 |
Volume: | 67 |
Issue: | 24 |
Start page: | 2413021 |
End page: | 2413024 |
Journal: | Physical Review B |
Abstract: | Monte Carlo simulations shed light on the stress field and composition of C-induced Ge islands on Si(100). It is shown that the dots do not contain C, under any conditions of temperature and coverage, but have a gradual composition profile from SiGe at the bottom to Ge at the apex. The average compressive stress in the islands is considerably reduced compared to the pure Ge/Si case. At low Ge coverage, the top substrate layer around the dots is enriched with Si-C dimers. At high Ge contents, Ge wets the surface and covers the predeposited C geometries. We predict enhancement of Ge content in the islands upon C incorporation. |
URI: | https://hdl.handle.net/20.500.14279/1599 |
ISSN: | 10980121 |
DOI: | 10.1103/PhysRevB.67.241302 |
Rights: | © The American Physical Society. Attribution-NonCommercial-NoDerivs 3.0 United States |
Type: | Article |
Affiliation: | University of Crete |
Affiliation : | University of Crete |
Publication Type: | Peer Reviewed |
Appears in Collections: | Άρθρα/Articles |
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