Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/1599
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hadjisavvas, George C. | - |
dc.contributor.author | Sonnet, Philippe | - |
dc.contributor.author | Kelires, Pantelis C. | - |
dc.contributor.other | Κελίρης, Παντελής | - |
dc.date.accessioned | 2013-03-04T13:30:36Z | en |
dc.date.accessioned | 2013-05-17T05:22:22Z | - |
dc.date.accessioned | 2015-12-02T10:01:21Z | - |
dc.date.available | 2013-03-04T13:30:36Z | en |
dc.date.available | 2013-05-17T05:22:22Z | - |
dc.date.available | 2015-12-02T10:01:21Z | - |
dc.date.issued | 2003-06-09 | - |
dc.identifier.citation | Physical Review B - Condensed Matter and Materials Physics, 2003, vol. 67, no. 24, pp. 2413021-2413024 | en_US |
dc.identifier.issn | 10980121 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.14279/1599 | - |
dc.description.abstract | Monte Carlo simulations shed light on the stress field and composition of C-induced Ge islands on Si(100). It is shown that the dots do not contain C, under any conditions of temperature and coverage, but have a gradual composition profile from SiGe at the bottom to Ge at the apex. The average compressive stress in the islands is considerably reduced compared to the pure Ge/Si case. At low Ge coverage, the top substrate layer around the dots is enriched with Si-C dimers. At high Ge contents, Ge wets the surface and covers the predeposited C geometries. We predict enhancement of Ge content in the islands upon C incorporation. | en_US |
dc.format | en_US | |
dc.language.iso | en | en_US |
dc.relation.ispartof | Physical Review B | en_US |
dc.rights | © The American Physical Society. | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | Carbon | en_US |
dc.subject | Germanium | en_US |
dc.subject | Silicon | en_US |
dc.subject | Geometry | en_US |
dc.title | Stress and composition of c-induced ge dots on si(100) | en_US |
dc.type | Article | en_US |
dc.affiliation | University of Crete | en |
dc.collaboration | University of Crete | en_US |
dc.subject.category | ENGINEERING AND TECHNOLOGY | en_US |
dc.journals | Hybrid Open Access | en_US |
dc.country | Cyprus | en_US |
dc.subject.field | Engineering and Technology | en_US |
dc.publication | Peer Reviewed | en_US |
dc.identifier.doi | 10.1103/PhysRevB.67.241302 | en_US |
dc.dept.handle | 123456789/54 | en |
dc.relation.issue | 24 | en_US |
dc.relation.volume | 67 | en_US |
cut.common.academicyear | 2003-2004 | en_US |
dc.identifier.spage | 2413021 | en_US |
dc.identifier.epage | 2413024 | en_US |
item.fulltext | No Fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | article | - |
item.grantfulltext | none | - |
item.languageiso639-1 | en | - |
item.cerifentitytype | Publications | - |
crisitem.journal.journalissn | 2469-9969 | - |
crisitem.journal.publisher | American Physical Society | - |
crisitem.author.dept | Department of Mechanical Engineering and Materials Science and Engineering | - |
crisitem.author.faculty | Faculty of Engineering and Technology | - |
crisitem.author.orcid | 0000-0002-0268-259X | - |
crisitem.author.parentorg | Faculty of Engineering and Technology | - |
Appears in Collections: | Άρθρα/Articles |
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