Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/1520
DC FieldValueLanguage
dc.contributor.authorKalli, Kyriacos-
dc.contributor.authorOthonos, Andreas S.-
dc.contributor.authorChristofidès, Constantinos-
dc.contributor.otherΚαλλή, Κυριάκος-
dc.date.accessioned2013-02-22T14:29:28Zen
dc.date.accessioned2013-05-17T05:22:46Z-
dc.date.accessioned2015-12-02T10:07:38Z-
dc.date.available2013-02-22T14:29:28Zen
dc.date.available2013-05-17T05:22:46Z-
dc.date.available2015-12-02T10:07:38Z-
dc.date.issued1998-11-10-
dc.identifier.citationReview of Scientific Instruments, 1998, vol. 69, no. 9, pp. 3331-3338en_US
dc.identifier.issn00346748-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/1520-
dc.description.abstractThe optical properties of several thin metal film palladium-silicon oxide structures are examined at room temperature before and after annealing to 200°C and also at 90°C - in all cases in the presence of hydrogen gas. Multicycling sample activation is shown to occur in the presence of hydrogen at room temperature with an increase in reflectivity on exposure to hydrogen, in contrast to thicker 80 Å films. The reflectivity change increases with increasing film thickness (1-10Å). The surface activation at room temperature, before and after annealing to 200°C, is compared with the performance at 90°C, where it is shown that heat treatment strongly influences the behavior of the metal film.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofReview of Scientific Instrumentsen_US
dc.rights© American Institute of Physicsen_US
dc.subjectPalladiumen_US
dc.subjectSilicon oxideen_US
dc.subjectTemperatureen_US
dc.subjectHydrogenen_US
dc.titleTemperature-induced reflectivity changes and activation of hydrogen sensitive optically thin palladium films on silicon oxideen_US
dc.typeArticleen_US
dc.affiliationUniversity of Cyprusen
dc.collaborationUniversity of Cyprusen_US
dc.collaborationLinköping Institute of Technologyen_US
dc.subject.categoryElectrical Engineering - Electronic Engineering - Information Engineeringen_US
dc.journalsHybrid Open Accessen_US
dc.countryCyprusen_US
dc.countrySwedenen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1063/1.1149116en_US
dc.dept.handle123456789/54en
dc.relation.issue9en_US
dc.relation.volume69en_US
cut.common.academicyear1998-1999en_US
dc.identifier.spage3331en_US
dc.identifier.epage3338en_US
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.fulltextNo Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.openairetypearticle-
crisitem.journal.journalissn1089-7623-
crisitem.journal.publisherAmerican Institute of Physics-
crisitem.author.deptDepartment of Electrical Engineering, Computer Engineering and Informatics-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0003-4541-092X-
crisitem.author.parentorgFaculty of Engineering and Technology-
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