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https://hdl.handle.net/20.500.14279/1440
Τίτλος: | Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k⋅p studies | Συγγραφείς: | Choulis, Stelios A. Hosea, Thomas Jeff Cockburn Tomić, Stanko S. |
metadata.dc.contributor.other: | Χούλης, Στέλιος Α. | Major Field of Science: | Natural Sciences | Field Category: | Chemical Sciences | Λέξεις-κλειδιά: | Quantum wells;Gallium;Indium;Hydrostatic pressure | Ημερομηνία Έκδοσης: | 30-Οκτ-2002 | Πηγή: | Physical review B - Condensed matter and materials physics, 2002, vol. 66, no. 16, pp. 1-9 | Volume: | 66 | Issue: | 16 | Start page: | 1 | End page: | 9 | Περιοδικό: | Physical Review B | Περίληψη: | We report photomodulated reflectance measurements of several intersubband transitions for a series of as-grown InyGa1-yAs1-xNx/GaAs multiple quantum well samples as functions of hydrostatic pressure (at room temperature) and temperature (at ambient pressure). The experimental results provide support for the effects of disorder due to different nearest-neighbor N-cation configurations. The quantum well transition energies obtained from the photomodulated reflectance spectra are fitted as a function of pressure with a realistic 10 band k⋅p Hamiltonian, that includes tight-binding-based energies and coupling parameters for the N levels. The quality of match between theory and experiment confirms the theoretical model and predicts some important material parameters for dilute-N InGaAsN alloys | URI: | https://hdl.handle.net/20.500.14279/1440 | ISSN: | 10980121 | DOI: | 10.1103/PhysRevB.66.165321 | Rights: | © The American Physical Society | Type: | Article | Affiliation: | University of Surrey | Affiliation: | University of Surrey | Publication Type: | Peer Reviewed |
Εμφανίζεται στις συλλογές: | Άρθρα/Articles |
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PhysRevB.66.165321.pdf | 126.14 kB | Adobe PDF | Δείτε/ Ανοίξτε |
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