Publications



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Issue DateTitleAuthor(s)
11-Jan-2022On the 3C-SiC/SiO<inf>2</inf>n-MOS interface and the creation of a calibrated model for the Electrons' Inversion Layer Mobility covering a wide range of operating temperatures and applied gate voltageLophitis, Neophytos ; Arvanitopoulos, Anastasios ; Jennings, Mike R. ; Mawby, Philip A. ; Antoniou, Marina