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| | Ημερομηνία Έκδοσης | Τίτλος | Συγγραφέας | Journal |
| 1 | 13-Ιαν-2024 | Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement | Almpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos | IEEE Transactions on Industry Applications |
| 2 | 2024 | Silicon Carbide n-IGBTs: Structure Optimization for Ruggedness Enhancement | Almpanis, Ioannis ; Antoniou, Marina ; Evans, Paul ; Empringham, Lee ; Gammon, Peter ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos | IEEE Transactions on Industry Applications |
| 3 | 1-Μαΐ-2023 | 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency | Almpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Undrea, Florin ; Mawby, Philip ; Lophitis, Neophytos | Key Engineering Materials |
| 4 | 1-Σεπ-2021 | Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes | Arvanitopoulos, Anastasios E. ; Li, Fan ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Mawby, Philip ; Antoniou, Marina ; Lophitis, Neophytos | IEEE Transactions on Industry Applications |
| 5 | 1-Μαρ-2020 | A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes | Arvanitopoulos, Anastasios E. ; Antoniou, Marina ; Jennings, Mike R. ; Perkins, Samuel ; Gyftakis, Konstantinos N. ; Mawby, Philip ; Lophitis, Neophytos | IEEE Journal of Emerging and Selected Topics in Power Electronics |
