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| Issue Date | Title | Author(s) |
| 25-Jul-2016 | 4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anode | Lophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Vemulapati, Umamaheswara ; Arnold, Martin ; Rahimo, Munaf ; Vobecky, Jan |
| 1-Sep-2020 | Integrated Gate Commutated Thyristor: From Trench to Planar | Vemulapati, Umamaheswara ; Stiasny, Thomas ; Wikstrom, Tobias ; Lophitis, Neophytos ; Udrea, Florin |
| 22-Jun-2017 | On the Investigation of the "anode Side" SuperJunction IGBT Design Concept | Antoniou, Marina ; Lophitis, Neophytos ; Udrea, Florin ; Bauer, Friedhelm ; Vemulapati, Umamaheswara Reddy ; Badstuebner, Uwe |
| 1-May-2019 | Operation of ultra-high voltage (>10kV) SiC IGBTs at elevated temperatures: Benefits & constraints | Tiwari, Amit K. ; Udrea, Florin ; Lophitis, Neophytos ; Antoniou, Marina |
| 1-Jan-2022 | Short-Circuit Performance Investigation of 10kV+ Rated SiC n-IGBT | Almpanis, Ioannis ; Evans, Paul ; Antoniou, Marina ; Gammon, Peter ; Empringham, Lee ; Udrea, Florin ; Mawby, Philip ; Lophitis, Neophytos |
