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| Ημερομηνία Έκδοσης | Τίτλος | Συγγραφέας |
| 1-Μαΐ-2018 | Carrier Transport mechanisms contributing to the sub-threshold current in 3C-SiC-on-Si Schottky Barrier Diodes | Arvanitopoulos, A. ; Perkins, Samuel ; Gyftakis, K. N. ; Lophitis, Neophytos ; Jennings, M. R. ; Antoniou, Marina |
| 2017 | A comprehensive comparison of the static performance of commercial GaN-on-Si devices | Perkins, Samuel ; Arvanitopoulos, A. ; Gyftakis, K. N. ; Lophitis, Neophytos |
| 1-Σεπ-2019 | Experimental Investigation and Verification of Traps affecting the performance of 3C-SiC-on-Si Schottky Barrier Diodes | Arvanitopoulos, A. ; Li, F. ; Jennings, M. R. ; Perkins, Samuel ; Gyftakis, K. N. ; Antoniou, M. ; Mawby, Philip ; Lophitis, Neophytos |
| 1-Μαΐ-2018 | On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures | Perkins, Samuel ; Arvanitopoulos, A. ; Gyftakis, K. N. ; Lophitis, Neophytos |
| 1-Αυγ-2019 | Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs | Perkins, Samuel ; Antoniou, Marina ; Tiwari, Amit K. ; Arvanitopoulos, A. ; Gyftakis, K. N. ; Trajkovic, T. ; Udrea, F. ; Lophitis, Neophytos |
| 6-Οκτ-2017 | Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC | Arvanitopoulos, A. ; Lophitis, Neophytos ; Perkins, Samuel ; Gyftakis, K. N. ; Belanche Guadas, M. ; Antoniou, Marina |
| 19-Σεπ-2017 | Validated physical models and parameters of bulk 3C-SiC aiming for credible technology computer aided design (TCAD) simulation | Arvanitopoulos, A. ; Lophitis, Neophytos ; Gyftakis, K. N. ; Perkins, Samuel ; Antoniou, M. |
| 1-Αυγ-2019 | Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations | Arvanitopoulos, A. ; Antoniou, Marina ; Li, F. ; Jennings, M. R. ; Perkins, Samuel ; Gyftakis, K. N. ; Lophitis, Neophytos |
