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Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/9961
DC FieldValueLanguage
dc.contributor.authorItskos, Grigorios-
dc.contributor.authorXristodoulou, X.-
dc.contributor.authorIliopoulos, Eleftherios-
dc.contributor.authorLadas, Spyridon-
dc.contributor.authorKennou, Stella-
dc.contributor.authorNeophytou, Marios-
dc.contributor.authorChoulis, Stelios A.-
dc.date.accessioned2017-02-24T10:18:31Z-
dc.date.available2017-02-24T10:18:31Z-
dc.date.issued2013-02-13-
dc.identifier.citationApplied Physics Letters, 2013, vol. 102, no. 6en_US
dc.identifier.issn00036951-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/9961-
dc.description.abstractElectronic and interface properties of spin-coated poly(9,9- dioctylfluorenyl-2,7-diyl) (PFO) films on GaN have been investigated in terms of their potential for optoelectronic applications. The PFO/GaN interface was studied by photoemission spectroscopy showing a type-II energy alignment with band offsets suitable for efficient photocurrent generation. The light harvesting potential is further supported by fluorescence experiments that show evidence of photo-induced electron transfer from PFO to GaN. The impact of polymer film thickness was probed using emission anisotropy and ellipsometry, indicating the presence of an ordered planar phase of PFO. The study has implications to hybrid optoelectronic devices employing the two important materials.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rights© American Institute of Physicsen_US
dc.subjectOptoelectronic applicationsen_US
dc.subjectInterfaces (materials)en_US
dc.subjectPolyfluorene filmsen_US
dc.titleElectronic and interface properties of polyfluorene films on GaN for hybrid optoelectronic applicationsen_US
dc.typeArticleen_US
dc.collaborationUniversity of Cyprusen_US
dc.collaborationPanepistimio Kritisen_US
dc.collaborationUniversity of Patrasen_US
dc.collaborationCyprus University of Technologyen_US
dc.subject.categoryMechanical Engineeringen_US
dc.journalsSubscriptionen_US
dc.countryCyprusen_US
dc.countryGreeceen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1063/1.4792211en_US
dc.relation.issue6en_US
dc.relation.volume102en_US
cut.common.academicyear2013-2014en_US
item.openairetypearticle-
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.languageiso639-1en-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0003-2207-4193-
crisitem.author.orcid0000-0002-7899-6296-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.journal.journalissn1077-3118-
crisitem.journal.publisherAmerican Institute of Physics-
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