Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides
Journal
Advanced Energy Materials
Date Issued
September 21, 2016
DOI
10.1002/aenm.201600285
Abstract
Perovskite photovoltaics (PVs) have attracted attention because of their
excellent power conversion efficiency (PCE). Critical issues related to large
area PV performance, reliability and lifetime need to be addressed. Here, we
show that doped metal oxides can provide ideal electron selectivity, improved
reliability and stability for perovskite PVs. We report p-i-n perovskite PVs
with device areas ranging from 0.09cm2 to 0.5cm2 incorporating a thick aluminum
doped zinc oxide (AZO) electron selective contact with hysteresis-free PCE of
over 13% and high fill factor values in the range of 80%. AZO provides suitable
energy levels for carrier selectivity, neutralizes the presence of pinholes and
provides intimate interfaces. Devices using AZO exhibit an average PCE increase
of over 20% compared with the devices without AZO and maintain the high PCE for
the larger area devices reported. Furthermore, the device stability of p-i-n
perovskite solar cells under the ISOS-D-1 is enhanced when AZO is used, and
maintains 100% of the initial PCE for over 1000 hours of exposure when AZO/Au
is used as the top electrode. Our results indicate the importance of doped
metal oxides as carrier selective contacts to achieve reliable and high
performance long lived large area perovskite solar cells.
excellent power conversion efficiency (PCE). Critical issues related to large
area PV performance, reliability and lifetime need to be addressed. Here, we
show that doped metal oxides can provide ideal electron selectivity, improved
reliability and stability for perovskite PVs. We report p-i-n perovskite PVs
with device areas ranging from 0.09cm2 to 0.5cm2 incorporating a thick aluminum
doped zinc oxide (AZO) electron selective contact with hysteresis-free PCE of
over 13% and high fill factor values in the range of 80%. AZO provides suitable
energy levels for carrier selectivity, neutralizes the presence of pinholes and
provides intimate interfaces. Devices using AZO exhibit an average PCE increase
of over 20% compared with the devices without AZO and maintain the high PCE for
the larger area devices reported. Furthermore, the device stability of p-i-n
perovskite solar cells under the ISOS-D-1 is enhanced when AZO is used, and
maintains 100% of the initial PCE for over 1000 hours of exposure when AZO/Au
is used as the top electrode. Our results indicate the importance of doped
metal oxides as carrier selective contacts to achieve reliable and high
performance long lived large area perovskite solar cells.
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