Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/9309
DC FieldValueLanguage
dc.contributor.authorLeontiou, Theodoros-
dc.contributor.authorKelires, Pantelis C.-
dc.date.accessioned2017-01-31T06:23:19Z-
dc.date.available2017-01-31T06:23:19Z-
dc.date.issued2016-03-16-
dc.identifier.citationPhysical Review B, 2016, vol. 93, no. 12en_US
dc.identifier.issn24699969-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/9309-
dc.description.abstractRecent experimental studies of Ge nanoislands on silicon-on-insulator (SOI) substrates have provided a defect-free strain relaxation mechanism through the bending of the substrate. Here, using atomistic Monte Carlo simulations and analytical modeling, we couple this relaxation mechanism with interdiffusion and alloying and observe composition profiles that are completely different from those observed in flat nanoislands. Moreover, for comparable SOI and island thicknesses, intermixing can be greatly reduced and Ge content in the islands is highly preserved.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofPhysical Review Ben_US
dc.rights© American Physical Society.en_US
dc.subjectNanostructuresen_US
dc.subjectCurved substratesen_US
dc.titleComposition and stress of SiGe nanostructures on curved substratesen_US
dc.typeArticleen_US
dc.collaborationFrederick Universityen_US
dc.collaborationCyprus University of Technologyen_US
dc.subject.categoryMechanical Engineeringen_US
dc.journalsSubscriptionen_US
dc.countryCyprusen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1103/PhysRevB.93.125307en_US
dc.relation.issue12en_US
dc.relation.volume93en_US
cut.common.academicyear2015-2016en_US
item.openairetypearticle-
item.cerifentitytypePublications-
item.fulltextNo Fulltext-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.languageiso639-1en-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0268-259X-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.journal.journalissn2469-9969-
crisitem.journal.publisherAmerican Physical Society-
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