Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/9232
DC FieldValueLanguage
dc.contributor.authorKostoglou, Nikolaos-
dc.contributor.authorLukovic, Jelena B.-
dc.contributor.authorBabic, Biljana M.-
dc.contributor.authorMatovic, Branko Ž-
dc.contributor.authorPhotiou, Demetris-
dc.contributor.authorConstantinides, Georgios-
dc.contributor.authorPolychronopoulou, Kyriaki-
dc.contributor.authorRyzhkov, Vladislav-
dc.contributor.authorGrossmann, Birgit-
dc.contributor.authorMitterer, Christian-
dc.contributor.authorRebholz, Claus-
dc.contributor.otherΦωτίου, Δημήτρης-
dc.contributor.otherΚωνσταντινίδης, Γιώργος-
dc.date.accessioned2017-01-25T12:50:35Z-
dc.date.available2017-01-25T12:50:35Z-
dc.date.issued2016-11-15-
dc.identifier.citationMaterials and Design, 2016, vol. 110, pp. 540-548en_US
dc.identifier.issn02641275-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/9232-
dc.description.abstractHexagonal boron nitride (h-BN) nanoplatelets with ~ 99 wt.% purity, 900 to 2000 nm particle width, 30 to 90 nm particle thickness, ~ 213 m2/g specific surface area (SSA), ~ 66% micropore SSA and ~ 0.85 nm average pore size were synthesized in a powder form using H3BO3 and CO(NH2)2 as precursors followed by consecutive thermal treatments under inert and oxidized atmospheres. Thermal gravimetric analysis (TGA) combined with differential scanning calorimetry (DSC), under synthetic air-flow and up to ~ 1300 °C, were employed to evaluate both purity and oxidation resistance of the product directly upon its synthesis. The h-BN powder was collected at the stage of its highest purity which, based on TGA-DSC data, corresponded to an additional heat treatment up to ~ 700 °C. The active oxidation seems to occur in the temperature range between ~ 860 and ~ 1000 °C, followed by formation of B2O3 in the final residue. Subsequently, the purified h-BN powder was extensively characterized for its structure, morphology and porosity using X-ray diffraction, scanning electron microscopy and nitrogen gas adsorption/desorption measurements at 77 K, respectively. As briefly discussed, purity and SSA seem to have a crucial role in the thermal stability and oxidation resistance of BN materials in general.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofMaterials & Designen_US
dc.rights© Elsevieren_US
dc.subjectBoron nitrideen_US
dc.subjectCharacterization studiesen_US
dc.subjectHexagonal structureen_US
dc.subjectNanoplateletsen_US
dc.subjectPorous powdersen_US
dc.subjectThermal purificationen_US
dc.titleFew-step synthesis, thermal purification and structural characterization of porous boron nitride nanoplateletsen_US
dc.typeArticleen_US
dc.doihttp://dx.doi.org/10.1016/j.matdes.2016.08.011en_US
dc.collaborationMontanuniversität Leobenen_US
dc.collaborationUniversity of Cyprusen_US
dc.collaborationUniversity of Belgradeen_US
dc.collaborationCyprus University of Technologyen_US
dc.collaborationKhalifa Universityen_US
dc.collaborationFibrtec Incorporationen_US
dc.subject.categoryChemical Sciencesen_US
dc.journalsOpen Accessen_US
dc.countryAustriaen_US
dc.countryCyprusen_US
dc.countrySerbiaen_US
dc.countryUnited Arab Emiratesen_US
dc.countryUnited Statesen_US
dc.subject.fieldNatural Sciencesen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1016/j.matdes.2016.08.011en_US
dc.relation.volume110en_US
cut.common.academicyear2016-2017en_US
dc.identifier.spage540en_US
dc.identifier.epage548en_US
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.grantfulltextnone-
item.languageiso639-1en-
item.cerifentitytypePublications-
crisitem.journal.journalissn0264-1275-
crisitem.journal.publisherElsevier-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0003-1979-5176-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.author.parentorgFaculty of Engineering and Technology-
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