Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/4358
DC FieldValueLanguage
dc.contributor.authorKelires, Pantelis C.-
dc.contributor.authorVantarakis, George-
dc.contributor.authorRemediakis, Ioannis N.-
dc.date.accessioned2013-03-04T08:42:21Zen
dc.date.accessioned2013-05-17T10:30:22Z-
dc.date.accessioned2015-12-09T12:07:58Z-
dc.date.available2013-03-04T08:42:21Zen
dc.date.available2013-05-17T10:30:22Z-
dc.date.available2015-12-09T12:07:58Z-
dc.date.issued2012-04-27-
dc.identifier.citationPhysical Review Letters, 2012, vol.108, no.17en_US
dc.identifier.issn10797114-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/4358-
dc.description.abstractWe investigate and elucidate the surprising observation of atomically ordered domains in dome-shaped SiGe nanoislands. We show, through atomistic MonteCarlo simulations, that this ordering is a surface-related phenomenon, and that is driven by surface equilibrium rather than by surface kinetics. The ordering depends on facet orientation. The main source of ordering is the {15323} facet, while the {105} and {113} facets contribute less. Subsurface ordered configurations self-organize under this facet and are frozen-in and buried during island growth, giving rise to the ordered domains. Ordering mechanisms based on constrained surface kinetics, requiring step-mediated segregation at the island facets, are shown to be much less likely.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofPhysical Review Lettersen_US
dc.rights© 2012 American Physical Society.en_US
dc.subjectSilicon alloysen_US
dc.titleOrdering Mechanisms in Epitaxial Sige Nanoislandsen_US
dc.typeArticleen_US
dc.collaborationCyprus University of Technologyen_US
dc.collaborationUniversity of Creteen_US
dc.subject.categoryCivil Engineeringen_US
dc.journalsOpen Accessen_US
dc.reviewpeer reviewed-
dc.countryCyprusen_US
dc.countryGreeceen_US
dc.subject.fieldEngineering and Technologyen_US
dc.identifier.doi10.1103/PhysRevLett.108.176102en_US
dc.dept.handle123456789/141en
dc.relation.issue17en_US
dc.relation.volume108en_US
cut.common.academicyear2011-2012en_US
item.openairetypearticle-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.languageiso639-1en-
item.fulltextNo Fulltext-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0268-259X-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.journal.journalissn1079-7114-
crisitem.journal.publisherAmerican Physical Society-
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