Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/4313
Title: | Self-assembly and ordering mechanisms of Ge islands on prepatterned Si(001) | Authors: | Pascale, Alina Berbezier, Isabelle Ronda, Antoine Kelires, Pantelis C. |
metadata.dc.contributor.other: | Κελίρης, Παντελής | Major Field of Science: | Engineering and Technology | Field Category: | Materials Engineering | Issue Date: | 2008 | Source: | Physical Review B. 2008, vol. 77, no. 7 | Journal: | Physical Review B | Abstract: | Ge deposition on Si 001 substrates patterned by focused ion beams is a promising route toward fabricating highly ordered quantum dots. Depending on the growth temperature T, remarkable orderings of the assembled islands are observed. At low T’s, when diffusion is limited, a metastable phase with dots nucleating in the holes prevails. At high T’s, when diffusion is not limited by kinetics, an equilibrium ordered phase is observed with dots nucleating on the terraces in between the pits. At intermediate T’s, random growth arises. Monte Carlo simulations shed light onto this phenomenon. It is shown that the average stress energy of the equilibrium ordered configuration is significantly lower than the energy of configurations with islands positioned in the pits. Random nucleation gives rise to saddle configurations between the two ordered phases. | URI: | https://hdl.handle.net/20.500.14279/4313 | ISSN: | 24699969 | DOI: | 10.1103/PhysRevB.77.075311 | Rights: | © The American Physical Society | Type: | Article | Affiliation : | Université Paul Cézanne University of Crete Cyprus University of Technology |
Publication Type: | Peer Reviewed |
Appears in Collections: | Άρθρα/Articles |
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