1. Ktisis Cyprus University of Technology
  2. Cyprus University of Technology (Research Output)
  3. Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation
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Πεδίο DCΤιμήΓλώσσα
dc.contributor.authorLophitis, Neophytos-
dc.contributor.authorAntoniou, Marina-
dc.contributor.authorUdrea, Florin-
dc.contributor.authorVemulapati, Umamaheswara-
dc.contributor.authorArnold, Martin-
dc.contributor.authorRahimo, Munaf-
dc.contributor.authorVobecky, Jan-
dc.date.accessioned2024-10-23T07:01:09Z-
dc.date.available2024-10-23T07:01:09Z-
dc.date.issued2016-07-25-
dc.identifier.citation28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) June 12 – 16, 2016, Prague, Czech Republicen_US
dc.identifier.isbn9781467387682-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/33111-
dc.description.abstractThe Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In this work we examine the impact of shallow diode-anodes on the operation of the GCT and propose the introduction of optimised High Power Technology (HPT+) in the GCT part. In order to assess and compare the new designs with the conventional, a multi-cell mixed mode model for large area device modelling was used. The analysis of the simulation results show that the shallow diode does not affect the MCC whereas the introduction of the HPT+ allows for a step improvement.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectAnodesen_US
dc.subjectDiodesen_US
dc.subjectElectrodesen_US
dc.subjectIntegrated circuitsen_US
dc.subjectReconfigurable hardwareen_US
dc.subjectSemiconductor diodesen_US
dc.subjectThyristorsen_US
dc.title4.5 kV Bi-mode Gate Commutated Thyristor design with High Power Technology and shallow diode-anodeen_US
dc.typeConference Papersen_US
dc.collaborationUniversity of Cambridgeen_US
dc.collaborationConventry Universityen_US
dc.collaborationABB Switzerland Ltden_US
dc.journalsSubscriptionen_US
dc.countryUnited Kingdomen_US
dc.countrySwitzerlanden_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.relation.conference28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)en_US
dc.identifier.doi10.1109/ISPSD.2016.7520855en_US
dc.identifier.scopus2-s2.0-84982084259-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/84982084259-
cut.common.academicyear2015-2016en_US
dc.identifier.spage371en_US
dc.identifier.epage374en_US
item.fulltextNo Fulltext-
item.languageiso639-1en-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_c94f-
item.cerifentitytypePublications-
item.openairetypeconferenceObject-
crisitem.author.deptDepartment of Electrical Engineering, Computer Engineering and Informatics-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-0901-0876-
crisitem.author.parentorgFaculty of Engineering and Technology-
Εμφανίζεται στις συλλογές:Δημοσιεύσεις σε συνέδρια /Conference papers or poster or presentation
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