Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/32798
DC FieldValueLanguage
dc.contributor.authorPapagiorgis, Paris-
dc.contributor.authorSergides, Marios-
dc.contributor.authorManoli, Andreas-
dc.contributor.authorAthanasiou, Modestos-
dc.contributor.authorBernasconi, Caterina-
dc.contributor.authorGalatopoulos, Fedros-
dc.contributor.authorIoakeimidis, Apostolos-
dc.contributor.authorNicolaides, Constantinos-
dc.contributor.authorLeontidis, Epameinondas-
dc.contributor.authorTrypiniotis, Theodossis-
dc.contributor.authorChoulis, Stelios A.-
dc.contributor.authorBodnarchuk, Maryna I.-
dc.contributor.authorKovalenko, Maksym V.-
dc.contributor.authorOthonos, Andreas-
dc.contributor.authorItskos, Grigorios-
dc.date.accessioned2024-08-20T08:06:35Z-
dc.date.available2024-08-20T08:06:35Z-
dc.date.issued2024-01-25-
dc.identifier.citationAdvanced Optical Materials, vol 12, no 3en_US
dc.identifier.issn2195-1071-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/32798-
dc.description.abstractLigand exchange performed during or after the colloidal synthesis of nanocrystals (NCs) provides an efficient way to produce conductive NC solids for optoelectronics. Herein, a post-synthetic ligand washing process is developed and applied to two different combinations of ligands and perovskite NCs, namely robust green CsPbBr3 NCs capped by didodecyldimethylammonium bromide and near-infrared FAPbI3 NCs decorated by weakly bound oleic acid ligands. The impact of such processes on the morphological and optoelectronic NC properties is examined while exploring parameters such as the reaction time and the influence of oxygen and humidity. For the FAPbI3 NCs, ligand washing results in extended NC aggregation and substantial photoluminescence loss, with the treatment becoming more aggressive for air-exposed films. For the CsPbBr3 NCs, the process is insensitive to the environmental conditions and results in partial ligand shell loss and NC close packing rather than bulk-like aggregation while affecting less the optical properties. Upon ligand removal, the photoconductance increases by up to ≈90% and ≈60% for FAPbI3 NCs and CsPbBr3 NCs, respectively. THz spectroscopy produces qualitatively similar trends of the conductivity with ligand removal time, with THz mobility values as high as 30 and 6 V−1s−1cm2 for glove box prepared FAPbI3 and CsPbBr3 NCs, respectively.en_US
dc.language.isoenen_US
dc.relation.ispartofAdvanced Optical Materialsen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internationalen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectlead halide perovskitesen_US
dc.subjectligandsen_US
dc.subjectphotoconductivityen_US
dc.subjectnanocrystalsen_US
dc.subjectphotoluminescenceen_US
dc.subjectTHz spectroscopyen_US
dc.titleThe Impact of Ligand Removal on the Optoelectronic Properties of Inorganic and Hybrid Lead Halide Perovskite Nanocrystal Filmsen_US
dc.typeArticleen_US
dc.collaborationUniversity of Cyprusen_US
dc.collaborationLaboratory for Thin Films and Photovoltaicsen_US
dc.collaborationEmpa-Swiss Federal Laboratories for Materials Science and Technologyen_US
dc.collaborationCyprus University of Technologyen_US
dc.subject.categoryPhysical Sciencesen_US
dc.journalsOpen Accessen_US
dc.countryCyprusen_US
dc.countrySwitzerlanden_US
dc.subject.fieldNatural Sciencesen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1002/adom.202301501en_US
dc.identifier.scopus2-s2.0-85176124607-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/85176124607-
dc.relation.issue3en_US
dc.relation.volume12en_US
cut.common.academicyear2024-2025en_US
item.grantfulltextopen-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0003-3974-6574-
crisitem.author.orcid0000-0002-7899-6296-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.author.parentorgFaculty of Engineering and Technology-
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