1. Ktisis Cyprus University of Technology
  2. Cyprus University of Technology (Research Output)
  3. Άρθρα/Articles
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Πεδίο DCΤιμήΓλώσσα
dc.contributor.authorIoakeimidis, Apostolos-
dc.contributor.authorGalatopoulos, Fedros-
dc.contributor.authorAthanasiou, M.-
dc.contributor.authorHauser, A.-
dc.contributor.authorRossier, M.-
dc.contributor.authorBodnarchuk, M. I.-
dc.contributor.authorKovalenko, M. V.-
dc.contributor.authorItskos, G.-
dc.contributor.authorChoulis, Stelios A.-
dc.date.accessioned2024-06-14T09:17:49Z-
dc.date.available2024-06-14T09:17:49Z-
dc.date.issued2024-03-22-
dc.identifier.citationACS Applied Optical Materials, 2024, vol. 2, iss. 3, pp. 528–534en_US
dc.identifier.issn27719855-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/32583-
dc.description.abstractWe present significant performance enhancement of CsPbBr3 perovskite nanocrystal (NC) light emitting diodes (PNC LEDs) by incorporation of a solution processed doped metal oxide hole injection interlayer consisting of 10 atom % doped antimony tin oxide (ATO) within the PNC LEDs device architecture. The incorporation of an ATO interlayer between ITO and poly-TPD improves the bottom electrode hole injection properties and provides charge balanced PNC LEDs that show three and half times increased luminance, lower turn-on voltage, and improved maximum current and power efficiency compared to reference CsPbBr3 PNC LEDs incorporating the commonly used PEDOT:PSS hole injection interlayer.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofACS Applied Optical Materialsen_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectElectrodesen_US
dc.subjectCharge balanceden_US
dc.subjectInterfacesen_US
dc.subjectHole injection layersen_US
dc.subjectDoped metal oxidesen_US
dc.subjectPerovskite nanocrystal light emitting diodesen_US
dc.titleAntimony-Doped Tin Oxide Hole Injection Interlayer Improving the Efficiency of Perovskite Nanocrystal Light Emitting Diodesen_US
dc.typeArticleen_US
dc.collaborationCyprus University of Technologyen_US
dc.collaborationUniversity of Cyprusen_US
dc.collaborationAvantama AGen_US
dc.collaborationEmpa-Swiss Federal Laboratories for Materials Science and Technologyen_US
dc.subject.categoryMechanical Engineeringen_US
dc.journalsOpen Accessen_US
dc.countryCyprusen_US
dc.countrySwitzerlanden_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1021/acsaom.4c00044en_US
dc.identifier.scopus2-s2.0-85188004880-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/85188004880-
dc.relation.issue3en_US
dc.relation.volume2en_US
cut.common.academicyear2024-2025en_US
dc.identifier.spage528en_US
dc.identifier.epage534en_US
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.cerifentitytypePublications-
item.openairetypearticle-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0003-3974-6574-
crisitem.author.orcid0000-0002-7899-6296-
crisitem.author.parentorgFaculty of Engineering and Technology-
crisitem.author.parentorgFaculty of Engineering and Technology-
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