Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/32572
DC FieldValueLanguage
dc.contributor.authorGalatopoulos, Fedros-
dc.contributor.authorBitton, Sapir-
dc.contributor.authorTziampou, Maria-
dc.contributor.authorTessler, Nir-
dc.contributor.authorChoulis, Stelios A.-
dc.date.accessioned2024-06-14T07:28:41Z-
dc.date.available2024-06-14T07:28:41Z-
dc.date.issued2023-10-24-
dc.identifier.citationACS applied electronic materials, 2023, vol. 5, iss. 10, pp. 5580–5587en_US
dc.identifier.issn26376113-
dc.identifier.issn26376113-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/32572-
dc.description.abstractThe roll-to-roll printing production process for hybrid organic-inorganic perovskite solar cells (PSCs) demands thick and high-performance solution-based diffusion blocking layers. Inverted (p-i-n) PSCs usually incorporate solution-processed PC70BM as the electron-transporting layer (ETL), which offers good electron charge extraction and passivation of the perovskite active layer grain boundaries. Thick fullerene diffusion blocking layers could benefit the long-term lifetime performance of inverted PSCs. However, the low conductivity of PC70BM significantly limits the thickness of the PC70BM buffer layer for optimized PSC performance. In this work, we show that by applying just enough N-DMBI doping principle, we can maintain the power conversion efficiency (PCE) of inverted PSCs with a thick (200 nm) PC70BM diffusion blocking layer. To better understand the origin of an optimal doping level, we combined the experimental results with simulations adapted to the PSCs reported here. Importantly, just enough 0.3% wt N-DMBI-doped 200 nm PC70BM diffusion blocking layer-based inverted PCSs retain a high thermal stability at 60 °C of up to 1000 h without sacrificing their PCE photovoltaic parameters.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofACS applied electronic materialsen_US
dc.rightsThis article is licensed under CC-BY 4.0en_US
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectperovskite solar cellsen_US
dc.subjectdiffusion mechanismsen_US
dc.subjectfullerenesen_US
dc.subjectdopingen_US
dc.subjectconductivityen_US
dc.subjectthermal stabilityen_US
dc.subjectlifetimeen_US
dc.subjectelectron-transporting layersen_US
dc.titleOptimized Doping of Diffusion Blocking Layers and Their Impact on the Performance of Perovskite Photovoltaicsen_US
dc.typeArticleen_US
dc.collaborationCyprus University of Technologyen_US
dc.collaborationTechnion-Israel Institute of Technologyen_US
dc.subject.categoryMechanical Engineeringen_US
dc.journalsOpen Accessen_US
dc.countryCyprusen_US
dc.countryIsraelen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1021/acsaelm.3c00900en_US
dc.identifier.pmid37900260-
dc.identifier.scopus2-s2.0-85176797908-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/85176797908-
dc.relation.issue10en_US
dc.relation.volume5en_US
cut.common.academicyear2023-2024en_US
dc.identifier.spage5580en_US
dc.identifier.epage5587en_US
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.cerifentitytypePublications-
item.grantfulltextopen-
item.languageiso639-1en-
item.fulltextWith Fulltext-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-7899-6296-
crisitem.author.parentorgFaculty of Engineering and Technology-
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