Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.14279/24310
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ha, Viet Anh | - |
dc.contributor.author | Volonakis, George | - |
dc.contributor.author | Lee, Hyungjun | - |
dc.contributor.author | Zacharias, Marios | - |
dc.contributor.author | Giustino, Feliciano | - |
dc.date.accessioned | 2022-02-17T12:49:27Z | - |
dc.date.available | 2022-02-17T12:49:27Z | - |
dc.date.issued | 2021-10-07 | - |
dc.identifier.citation | Journal of Physical Chemistry C, 2021, vol. 125, no. 39, pp. 21689-21700 | en_US |
dc.identifier.issn | 19327447 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.14279/24310 | - |
dc.description.abstract | The lead-free halide double perovskite Cs2InAgCl6 was recently designed in silico and subsequently synthesized in the lab. This perovskite is a wide-gap semiconductor with a direct band gap and exhibits extraordinary photoluminescence in the visible range upon Na doping. The light emission properties of Cs2InAgCl6 have successfully been exploited to fabricate stable single-emitter-based white-light LEDs with near unity quantum efficiency. An intriguing puzzle in the photophysics of this compound is that the onset of optical absorption is around 3 eV, but the luminescence peak is found around 2 eV. As a first step toward elucidating this mismatch and clarifying the atomic-scale mechanisms underpinning the observed luminescence, here, we report a detailed investigation of the quasiparticle band structure of Cs2InAgCl6 as well as the phonon-induced renormalization of the band structure. We perform calculations of bang gaps and effective masses using the GW method, and we calculate the phonon-induced band structure renormalization using the special displacement method. We find that GW calculations are rather sensitive to the functional used in the density functional theory calculations and that self-consistency on the eigenvalues is necessary to achieve quantitative agreement with experiments. Our most accurate band gap at room temperature is in the range of 3.1-3.2 eV and includes a phonon-induced gap renormalization of 0.2 eV. By computing the phonon-induced mass enhancement, we find that the electron carriers are in the weak polaronic coupling regime, while hole carriers are in the intermediate coupling regime as a result of the localized and directional nature of the Ag eg 4d states at the valence band top. | en_US |
dc.format | en_US | |
dc.language.iso | en | en_US |
dc.relation.ispartof | The Journal of Physical Chemistry C | en_US |
dc.rights | © American Chemical Society | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Eigenvalues and eigenfunctions | en_US |
dc.subject | Perovskite | en_US |
dc.subject | Doping | en_US |
dc.subject | Light emission properties | en_US |
dc.subject | Phonon-induced gap | en_US |
dc.title | Quasiparticle Band Structure and Phonon-Induced Band Gap Renormalization of the Lead-Free Halide Double Perovskite Cs2InAgCl6 | en_US |
dc.type | Article | en_US |
dc.collaboration | University of Texas at Austin | en_US |
dc.collaboration | Université de Rennes | en_US |
dc.collaboration | Cyprus University of Technology | en_US |
dc.subject.category | Materials Engineering | en_US |
dc.journals | Subscription | en_US |
dc.country | United States | en_US |
dc.country | France | en_US |
dc.country | Cyprus | en_US |
dc.subject.field | Engineering and Technology | en_US |
dc.publication | Peer Reviewed | en_US |
dc.identifier.doi | 10.1021/acs.jpcc.1c06542 | en_US |
dc.identifier.scopus | 2-s2.0-85116627049 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/85116627049 | - |
dc.relation.issue | 39 | en_US |
dc.relation.volume | 125 | en_US |
cut.common.academicyear | 2020-2021 | en_US |
dc.identifier.spage | 21689 | en_US |
dc.identifier.epage | 21700 | en_US |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | article | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | none | - |
item.languageiso639-1 | en | - |
item.fulltext | No Fulltext | - |
crisitem.journal.journalissn | 1932-7455 | - |
crisitem.journal.publisher | American Chemical Society | - |
crisitem.author.dept | Department of Mechanical Engineering and Materials Science and Engineering | - |
crisitem.author.faculty | Faculty of Engineering and Technology | - |
crisitem.author.orcid | 0000-0002-7052-5684 | - |
crisitem.author.parentorg | Faculty of Engineering and Technology | - |
Appears in Collections: | Άρθρα/Articles |
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