Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.14279/24310
DC FieldValueLanguage
dc.contributor.authorHa, Viet Anh-
dc.contributor.authorVolonakis, George-
dc.contributor.authorLee, Hyungjun-
dc.contributor.authorZacharias, Marios-
dc.contributor.authorGiustino, Feliciano-
dc.date.accessioned2022-02-17T12:49:27Z-
dc.date.available2022-02-17T12:49:27Z-
dc.date.issued2021-10-07-
dc.identifier.citationJournal of Physical Chemistry C, 2021, vol. 125, no. 39, pp. 21689-21700en_US
dc.identifier.issn19327447-
dc.identifier.urihttps://hdl.handle.net/20.500.14279/24310-
dc.description.abstractThe lead-free halide double perovskite Cs2InAgCl6 was recently designed in silico and subsequently synthesized in the lab. This perovskite is a wide-gap semiconductor with a direct band gap and exhibits extraordinary photoluminescence in the visible range upon Na doping. The light emission properties of Cs2InAgCl6 have successfully been exploited to fabricate stable single-emitter-based white-light LEDs with near unity quantum efficiency. An intriguing puzzle in the photophysics of this compound is that the onset of optical absorption is around 3 eV, but the luminescence peak is found around 2 eV. As a first step toward elucidating this mismatch and clarifying the atomic-scale mechanisms underpinning the observed luminescence, here, we report a detailed investigation of the quasiparticle band structure of Cs2InAgCl6 as well as the phonon-induced renormalization of the band structure. We perform calculations of bang gaps and effective masses using the GW method, and we calculate the phonon-induced band structure renormalization using the special displacement method. We find that GW calculations are rather sensitive to the functional used in the density functional theory calculations and that self-consistency on the eigenvalues is necessary to achieve quantitative agreement with experiments. Our most accurate band gap at room temperature is in the range of 3.1-3.2 eV and includes a phonon-induced gap renormalization of 0.2 eV. By computing the phonon-induced mass enhancement, we find that the electron carriers are in the weak polaronic coupling regime, while hole carriers are in the intermediate coupling regime as a result of the localized and directional nature of the Ag eg 4d states at the valence band top.en_US
dc.formatpdfen_US
dc.language.isoenen_US
dc.relation.ispartofThe Journal of Physical Chemistry Cen_US
dc.rights© American Chemical Societyen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectEigenvalues and eigenfunctionsen_US
dc.subjectPerovskiteen_US
dc.subjectDopingen_US
dc.subjectLight emission propertiesen_US
dc.subjectPhonon-induced gapen_US
dc.titleQuasiparticle Band Structure and Phonon-Induced Band Gap Renormalization of the Lead-Free Halide Double Perovskite Cs2InAgCl6en_US
dc.typeArticleen_US
dc.collaborationUniversity of Texas at Austinen_US
dc.collaborationUniversité de Rennesen_US
dc.collaborationCyprus University of Technologyen_US
dc.subject.categoryMaterials Engineeringen_US
dc.journalsSubscriptionen_US
dc.countryUnited Statesen_US
dc.countryFranceen_US
dc.countryCyprusen_US
dc.subject.fieldEngineering and Technologyen_US
dc.publicationPeer Revieweden_US
dc.identifier.doi10.1021/acs.jpcc.1c06542en_US
dc.identifier.scopus2-s2.0-85116627049-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/85116627049-
dc.relation.issue39en_US
dc.relation.volume125en_US
cut.common.academicyear2020-2021en_US
dc.identifier.spage21689en_US
dc.identifier.epage21700en_US
item.fulltextNo Fulltext-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypearticle-
item.languageiso639-1en-
crisitem.journal.journalissn1932-7455-
crisitem.journal.publisherAmerican Chemical Society-
crisitem.author.deptDepartment of Mechanical Engineering and Materials Science and Engineering-
crisitem.author.facultyFaculty of Engineering and Technology-
crisitem.author.orcid0000-0002-7052-5684-
crisitem.author.parentorgFaculty of Engineering and Technology-
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